Evidence for transformation from δt<inf>c</inf> to δl pinning in MgB<inf>2</inf> by graphene oxide doping with improved low and high field J<inf>c</inf> and pinning potential

Xi'Ang, FX; Wang, XL; Xun, X; De Silva, KSB; Wang, YX; Dou, SX

Evidence for transformation from δt<inf>c</inf> to δl pinning in MgB<inf>2</inf> by graphene oxide doping with improved low and high field J<inf>c</inf> and pinning potential

Xi'Ang, FX Wang, XL Xun, X De Silva, KSB

Wang, YX Dou, SX

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2013, 102 (15)
Issue Date:: 2013-04-15

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Field	Value	Language
dc.contributor.author	Xi'Ang, FX	en_US
dc.contributor.author	Wang, XL	en_US
dc.contributor.author	Xun, X	en_US
dc.contributor.author	De Silva, KSB https://orcid.org/0000-0002-3242-4858	en_US
dc.contributor.author	Wang, YX	en_US
dc.contributor.author	Dou, SX	en_US
dc.date.issued	2013-04-15	en_US
dc.identifier.citation	Applied Physics Letters, 2013, 102 (15)	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/116447
dc.description.abstract	Flux pinning mechanism of graphene oxide (GO) doped MgB2 has been systematically studied. In the framework of the collective pinning theory, a B-T phase diagram has been constructed. By adjusting the GO doping level, the pinning mechanism in MgB2 transformed from transition temperature fluctuation induced pinning, δTc pinning, to mean free path fluctuation induced pinning, δl pinning, is observed. Furthermore, in terms of the thermally activated flux flow model, the pinning potential in high field (B > 5 T) is enhanced by GO doping. The unique feature of GO is the significant improvement of both low field Jc and high field J c. © 2013 American Institute of Physics.	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.4799360	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Evidence for transformation from δt<inf>c</inf> to δl pinning in MgB<inf>2</inf> by graphene oxide doping with improved low and high field J<inf>c</inf> and pinning potential	en_US
dc.type	Journal Article
utslib.citation.volume	15	en_US
utslib.citation.volume	102	en_US
utslib.for	1007 Nanotechnology	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access
pubs.issue	15	en_US
pubs.publication-status	Published	en_US
pubs.volume	102	en_US

Abstract:

Flux pinning mechanism of graphene oxide (GO) doped MgB2 has been systematically studied. In the framework of the collective pinning theory, a B-T phase diagram has been constructed. By adjusting the GO doping level, the pinning mechanism in MgB2 transformed from transition temperature fluctuation induced pinning, δTc pinning, to mean free path fluctuation induced pinning, δl pinning, is observed. Furthermore, in terms of the thermally activated flux flow model, the pinning potential in high field (B > 5 T) is enhanced by GO doping. The unique feature of GO is the significant improvement of both low field Jc and high field J c. © 2013 American Institute of Physics.

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http://hdl.handle.net/10453/116447