Transformation from AA to AB-stacked bilayer graphene on α-SiO <inf>2</inf> under an electric field

Liu, Y; Ao, ZM; Wang, T; Wang, WB; Sheng, K; Yu, B

Transformation from AA to AB-stacked bilayer graphene on α-SiO <inf>2</inf> under an electric field

Liu, Y Ao, ZM

Wang, T Wang, WB Sheng, K Yu, B

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Publication Type:: Journal Article
Citation:: Chinese Physics Letters, 2011, 28 (8)
Issue Date:: 2011-08-01

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Field	Value	Language
dc.contributor.author	Liu, Y	en_US
dc.contributor.author	Ao, ZM https://orcid.org/0000-0003-0333-3727	en_US
dc.contributor.author	Wang, T	en_US
dc.contributor.author	Wang, WB	en_US
dc.contributor.author	Sheng, K	en_US
dc.contributor.author	Yu, B	en_US
dc.date.issued	2011-08-01	en_US
dc.identifier.citation	Chinese Physics Letters, 2011, 28 (8)	en_US
dc.identifier.issn	0256-307X	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117478
dc.description.abstract	The energetic and electronic structure of bilayered graphene (BLG) with AA stacking arrangement on a SiO2 substrate is investigated in the presence of an electric field F of different intensities by ab initio density functional calculations. The AA-stacked bilayer graphene is stable on the SiO2 substrate in the absence of an electric field. However, as F increases, the AA-stacked bilayer graphenes are gradually shifted with each other and finally transfers into AB-stacked bilayer graphenes. The bandgap is accordingly changed. © 2011 Chinese Physical Society and IOP Publishing Ltd.	en_US
dc.relation.ispartof	Chinese Physics Letters	en_US
dc.relation.isbasedon	10.1088/0256-307X/28/8/087303	en_US
dc.subject.classification	General Physics	en_US
dc.title	Transformation from AA to AB-stacked bilayer graphene on α-SiO <inf>2</inf> under an electric field	en_US
dc.type	Journal Article
utslib.citation.volume	8	en_US
utslib.citation.volume	28	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	01 Mathematical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	8	en_US
pubs.publication-status	Published	en_US
pubs.volume	28	en_US

Abstract:

The energetic and electronic structure of bilayered graphene (BLG) with AA stacking arrangement on a SiO2 substrate is investigated in the presence of an electric field F of different intensities by ab initio density functional calculations. The AA-stacked bilayer graphene is stable on the SiO2 substrate in the absence of an electric field. However, as F increases, the AA-stacked bilayer graphenes are gradually shifted with each other and finally transfers into AB-stacked bilayer graphenes. The bandgap is accordingly changed. © 2011 Chinese Physical Society and IOP Publishing Ltd.

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http://hdl.handle.net/10453/117478