Excited State Biexcitons in Atomically Thin MoSe<inf>2</inf>

Pei, J; Yang, J; Wang, X; Wang, F; Mokkapati, S; Lü, T; Zheng, JC; Qin, Q; Neshev, D; Tan, HH; Jagadish, C; Lu, Y

Excited State Biexcitons in Atomically Thin MoSe<inf>2</inf>

Pei, J Yang, J Wang, X Wang, F

Mokkapati, S Lü, T Zheng, JC Qin, Q Neshev, D Tan, HH Jagadish, C Lu, Y

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Publication Type:: Journal Article
Citation:: ACS Nano, 2017, 11 (7), pp. 7468 - 7475
Issue Date:: 2017-07-25

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Field	Value	Language
dc.contributor.author	Pei, J	en_US
dc.contributor.author	Yang, J	en_US
dc.contributor.author	Wang, X	en_US
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Mokkapati, S	en_US
dc.contributor.author	Lü, T	en_US
dc.contributor.author	Zheng, JC	en_US
dc.contributor.author	Qin, Q	en_US
dc.contributor.author	Neshev, D	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.contributor.author	Lu, Y	en_US
dc.date.issued	2017-07-25	en_US
dc.identifier.citation	ACS Nano, 2017, 11 (7), pp. 7468 - 7475	en_US
dc.identifier.issn	1936-0851	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117545
dc.description.abstract	© 2017 American Chemical Society. The tightly bound biexcitons found in atomically thin semiconductors have very promising applications for optoelectronic and quantum devices. However, there is a discrepancy between theory and experiment regarding the fundamental structure of these biexcitons. Therefore, the exploration of a biexciton formation mechanism by further experiments is of great importance. Here, we successfully triggered the emission of biexcitons in atomically thin MoSe2, via the engineering of three critical parameters: dielectric screening, density of trions, and excitation power. The observed binding energy and formation dynamics of these biexcitons strongly support the model that the biexciton consists of a charge attached to a trion (excited state biexciton) instead of four spatially symmetric particles (ground state biexciton). More importantly, we found that the excited state biexcitons not only can exist at cryogenic temperatures but also can be triggered at room temperature in a freestanding bilayer MoSe2. The demonstrated capability of biexciton engineering in atomically thin MoSe2 provides a route for exploring fundamental many-body interactions and enabling device applications, such as bright entangled photon sources operating at room temperature.	en_US
dc.relation.ispartof	ACS Nano	en_US
dc.relation.isbasedon	10.1021/acsnano.7b03909	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Excited State Biexcitons in Atomically Thin MoSe<inf>2</inf>	en_US
dc.type	Journal Article
utslib.citation.volume	7	en_US
utslib.citation.volume	11	en_US
utslib.for	0601 Biochemistry and Cell Biology	en_US
utslib.for	MD Multidisciplinary	en_US
utslib.for	1007 Nanotechnology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	7	en_US
pubs.publication-status	Published	en_US
pubs.volume	11	en_US

Abstract:

© 2017 American Chemical Society. The tightly bound biexcitons found in atomically thin semiconductors have very promising applications for optoelectronic and quantum devices. However, there is a discrepancy between theory and experiment regarding the fundamental structure of these biexcitons. Therefore, the exploration of a biexciton formation mechanism by further experiments is of great importance. Here, we successfully triggered the emission of biexcitons in atomically thin MoSe2, via the engineering of three critical parameters: dielectric screening, density of trions, and excitation power. The observed binding energy and formation dynamics of these biexcitons strongly support the model that the biexciton consists of a charge attached to a trion (excited state biexciton) instead of four spatially symmetric particles (ground state biexciton). More importantly, we found that the excited state biexcitons not only can exist at cryogenic temperatures but also can be triggered at room temperature in a freestanding bilayer MoSe2. The demonstrated capability of biexciton engineering in atomically thin MoSe2 provides a route for exploring fundamental many-body interactions and enabling device applications, such as bright entangled photon sources operating at room temperature.

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http://hdl.handle.net/10453/117545