InP-In<inf>x</inf>Ga<inf>1-x</inf>As core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range

Fonseka, HA; Ameruddin, AS; Caroff, P; Tedeschi, D; De Luca, M; Mura, F; Guo, Y; Lysevych, M; Wang, F; Tan, HH; Polimeni, A; Jagadish, C

InP-In<inf>x</inf>Ga<inf>1-x</inf>As core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range

Fonseka, HA Ameruddin, AS Caroff, P Tedeschi, D De Luca, M Mura, F Guo, Y Lysevych, M Wang, F

Tan, HH Polimeni, A Jagadish, C

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Publication Type:: Journal Article
Citation:: Nanoscale, 2017, 9 (36), pp. 13554 - 13562
Issue Date:: 2017-09-28

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Field	Value	Language
dc.contributor.author	Fonseka, HA	en_US
dc.contributor.author	Ameruddin, AS	en_US
dc.contributor.author	Caroff, P	en_US
dc.contributor.author	Tedeschi, D	en_US
dc.contributor.author	De Luca, M	en_US
dc.contributor.author	Mura, F	en_US
dc.contributor.author	Guo, Y	en_US
dc.contributor.author	Lysevych, M	en_US
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Polimeni, A	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2017-09-28	en_US
dc.identifier.citation	Nanoscale, 2017, 9 (36), pp. 13554 - 13562	en_US
dc.identifier.issn	2040-3364	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117549
dc.description.abstract	© 2017 The Royal Society of Chemistry. The usability and tunability of the essential InP-InGaAs material combination in nanowire-based quantum wells (QWs) are assessed. The wurtzite phase core-multi-shell InP-InGaAs-InP nanowire QWs are characterised using cross-section transmission electron microscopy and photoluminescence measurements. The InP-InGaAs direct interface is found to be sharp while the InGaAs-InP inverted interface is more diffused, in agreement with their planar counterpart. Bright emission is observed from the single nanowires containing the QWs at room temperature, with no emission from the InP core or outer barrier. The tunability of the QW emission wavelength in the 1.3-1.55 μm communication wavelength range is demonstrated by varying the QW thickness and in the 1.3 μm range by varying the composition. The experiments are supported by simulation of the emission wavelength of the wurtzite phase InP-InGaAs QWs in the thickness range considered. The radial heterostructure is further extended to design multiple QWs with bright emission, therefore establishing the capability of this material system for nanowire based optical devices for communication applications.	en_US
dc.relation.ispartof	Nanoscale	en_US
dc.relation.isbasedon	10.1039/c7nr04598k	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	InP-In<inf>x</inf>Ga<inf>1-x</inf>As core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range	en_US
dc.type	Journal Article
utslib.citation.volume	36	en_US
utslib.citation.volume	9	en_US
utslib.for	1003 Industrial Biotechnology	en_US
utslib.for	0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics	en_US
utslib.for	0301 Analytical Chemistry	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	open_access
pubs.issue	36	en_US
pubs.publication-status	Published	en_US
pubs.volume	9	en_US

Abstract:

© 2017 The Royal Society of Chemistry. The usability and tunability of the essential InP-InGaAs material combination in nanowire-based quantum wells (QWs) are assessed. The wurtzite phase core-multi-shell InP-InGaAs-InP nanowire QWs are characterised using cross-section transmission electron microscopy and photoluminescence measurements. The InP-InGaAs direct interface is found to be sharp while the InGaAs-InP inverted interface is more diffused, in agreement with their planar counterpart. Bright emission is observed from the single nanowires containing the QWs at room temperature, with no emission from the InP core or outer barrier. The tunability of the QW emission wavelength in the 1.3-1.55 μm communication wavelength range is demonstrated by varying the QW thickness and in the 1.3 μm range by varying the composition. The experiments are supported by simulation of the emission wavelength of the wurtzite phase InP-InGaAs QWs in the thickness range considered. The radial heterostructure is further extended to design multiple QWs with bright emission, therefore establishing the capability of this material system for nanowire based optical devices for communication applications.

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http://hdl.handle.net/10453/117549