Room temperature GaAsSb single nanowire infrared photodetectors

Li, Z; Yuan, X; Fu, L; Peng, K; Wang, F; Fu, X; Caroff, P; White, TP; Hoe Tan, H; Jagadish, C

Room temperature GaAsSb single nanowire infrared photodetectors

Li, Z Yuan, X Fu, L Peng, K Wang, F

Fu, X Caroff, P White, TP Hoe Tan, H Jagadish, C

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Publication Type:: Journal Article
Citation:: Nanotechnology, 2015, 26 (44)
Issue Date:: 2015-10-09

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Field	Value	Language
dc.contributor.author	Li, Z	en_US
dc.contributor.author	Yuan, X	en_US
dc.contributor.author	Fu, L	en_US
dc.contributor.author	Peng, K	en_US
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Fu, X	en_US
dc.contributor.author	Caroff, P	en_US
dc.contributor.author	White, TP	en_US
dc.contributor.author	Hoe Tan, H	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2015-10-09	en_US
dc.identifier.citation	Nanotechnology, 2015, 26 (44)	en_US
dc.identifier.issn	0957-4484	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117553
dc.description.abstract	© 2015 IOP Publishing Ltd. Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetection. Here we demonstrate room temperature operation of GaAs0.56Sb0.44 NW infrared photodetectors grown by metal organic vapor phase epitaxy. These GaAs0.56Sb0.44 NWs have uniform axial composition and show p-type conductivity with a peak field-effect mobility of ∼12 cm2 V-1 s-1). Under light illumination, single GaAs0.56Sb0.44 NW photodetectors exhibited typical photoconductor behavior with an increased photocurrent observed with the increase of temperature owing to thermal activation of carrier trap states. A broadband infrared photoresponse with a long wavelength cutoff at ∼1.66 μm was obtained at room temperature. At a low operating bias voltage of 0.15 V a responsivity of 2.37 (1.44) A/W with corresponding detectivity of 1.08×109 (6.55×108) were achieved at the wavelength of 1.3 (1.55) μm, indicating that ternary GaAs0.56Sb0.44 NWs are promising photodetector candidates for small footprint integrated optical telecommunication systems.	en_US
dc.relation.ispartof	Nanotechnology	en_US
dc.relation.isbasedon	10.1088/0957-4484/26/44/445202	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Room temperature GaAsSb single nanowire infrared photodetectors	en_US
dc.type	Journal Article
utslib.citation.volume	44	en_US
utslib.citation.volume	26	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0205 Optical Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	44	en_US
pubs.publication-status	Published	en_US
pubs.volume	26	en_US

Abstract:

© 2015 IOP Publishing Ltd. Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetection. Here we demonstrate room temperature operation of GaAs0.56Sb0.44 NW infrared photodetectors grown by metal organic vapor phase epitaxy. These GaAs0.56Sb0.44 NWs have uniform axial composition and show p-type conductivity with a peak field-effect mobility of ∼12 cm2 V-1 s-1). Under light illumination, single GaAs0.56Sb0.44 NW photodetectors exhibited typical photoconductor behavior with an increased photocurrent observed with the increase of temperature owing to thermal activation of carrier trap states. A broadband infrared photoresponse with a long wavelength cutoff at ∼1.66 μm was obtained at room temperature. At a low operating bias voltage of 0.15 V a responsivity of 2.37 (1.44) A/W with corresponding detectivity of 1.08×109 (6.55×108) were achieved at the wavelength of 1.3 (1.55) μm, indicating that ternary GaAs0.56Sb0.44 NWs are promising photodetector candidates for small footprint integrated optical telecommunication systems.

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http://hdl.handle.net/10453/117553