Selective-area epitaxy of pure wurtzite InP nanowires: High quantum efficiency and room-temperature lasing

Gao, Q; Saxena, D; Wang, F; Fu, L; Mokkapati, S; Guo, Y; Li, L; Wong-Leung, J; Caroff, P; Tan, HH; Jagadish, C

Selective-area epitaxy of pure wurtzite InP nanowires: High quantum efficiency and room-temperature lasing

Gao, Q Saxena, D Wang, F

Fu, L Mokkapati, S Guo, Y Li, L Wong-Leung, J Caroff, P Tan, HH Jagadish, C

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Publication Type:: Journal Article
Citation:: Nano Letters, 2014, 14 (9), pp. 5206 - 5211
Issue Date:: 2014-09-10

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Field	Value	Language
dc.contributor.author	Gao, Q	en_US
dc.contributor.author	Saxena, D	en_US
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Fu, L	en_US
dc.contributor.author	Mokkapati, S	en_US
dc.contributor.author	Guo, Y	en_US
dc.contributor.author	Li, L	en_US
dc.contributor.author	Wong-Leung, J	en_US
dc.contributor.author	Caroff, P	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2014-09-10	en_US
dc.identifier.citation	Nano Letters, 2014, 14 (9), pp. 5206 - 5211	en_US
dc.identifier.issn	1530-6984	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117563
dc.description.abstract	© 2014 American Chemical Society. We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of μ50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.	en_US
dc.relation.ispartof	Nano Letters	en_US
dc.relation.isbasedon	10.1021/nl5021409	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Selective-area epitaxy of pure wurtzite InP nanowires: High quantum efficiency and room-temperature lasing	en_US
dc.type	Journal Article
utslib.citation.volume	9	en_US
utslib.citation.volume	14	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0205 Optical Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	9	en_US
pubs.publication-status	Published	en_US
pubs.volume	14	en_US

Abstract:

© 2014 American Chemical Society. We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of μ50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.

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http://hdl.handle.net/10453/117563