Fluorescent emission in different silicon carbide polytypes

Castelletto, S; Johnson, BC; Aharonovich, I; Parker, A

Fluorescent emission in different silicon carbide polytypes

Castelletto, S Johnson, BC Aharonovich, I

Parker, A

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Publication Type:: Conference Proceeding
Citation:: Proceedings of SPIE - The International Society for Optical Engineering, 2013, 8923
Issue Date:: 2013-12-01

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Field	Value	Language
dc.contributor.author	Castelletto, S	en_US
dc.contributor.author	Johnson, BC	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Parker, A	en_US
dc.date.issued	2013-12-01	en_US
dc.identifier.citation	Proceedings of SPIE - The International Society for Optical Engineering, 2013, 8923	en_US
dc.identifier.isbn	9780819498144	en_US
dc.identifier.issn	0277-786X	en_US
dc.identifier.uri	http://hdl.handle.net/10453/120216
dc.description.abstract	Silicon carbide (SiC) is a widely used material in several industrial applications such as high power electronics, light emitting diodes, and in research application such as photo-voltaic and quantum technologies. As nanoparticles it can be synthetised in many sizes and different polytypes from 200 nm down to 1 nm. In the form of quantum dots they are used as optical biomarkers, and their emission, occurring from the blue to the orange spectral region, is based on quantum confinement effect. In this work we report on emission in the red and near infrared in different SiC polytypes, specifically in 4H, 6H and 3C. In 4H SiC the red visible emission yielded non classical light attributed to an intrinsic defect, identified as a carbon-antisite vacancy pair. Similar spectral emission was observed in 3C SiC bulk and nanoparticles, also yielding very bright single photon emission. Emission in the far red has been observed in homogeneous hetero-structure in SiC tetrapods. © 2013 Copyright SPIE.	en_US
dc.relation.ispartof	Proceedings of SPIE - The International Society for Optical Engineering	en_US
dc.relation.isbasedon	10.1117/12.2033265	en_US
dc.title	Fluorescent emission in different silicon carbide polytypes	en_US
dc.type	Conference Proceeding
utslib.citation.volume	8923	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	1007 Nanotechnology	en_US
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	open_access
pubs.publication-status	Published	en_US
pubs.volume	8923	en_US

Abstract:

Silicon carbide (SiC) is a widely used material in several industrial applications such as high power electronics, light emitting diodes, and in research application such as photo-voltaic and quantum technologies. As nanoparticles it can be synthetised in many sizes and different polytypes from 200 nm down to 1 nm. In the form of quantum dots they are used as optical biomarkers, and their emission, occurring from the blue to the orange spectral region, is based on quantum confinement effect. In this work we report on emission in the red and near infrared in different SiC polytypes, specifically in 4H, 6H and 3C. In 4H SiC the red visible emission yielded non classical light attributed to an intrinsic defect, identified as a carbon-antisite vacancy pair. Similar spectral emission was observed in 3C SiC bulk and nanoparticles, also yielding very bright single photon emission. Emission in the far red has been observed in homogeneous hetero-structure in SiC tetrapods. © 2013 Copyright SPIE.

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