A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process
- Publication Type:
- Conference Proceeding
- Citation:
- 2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013, 2013, pp. 278 - 281
- Issue Date:
- 2013-12-01
Closed Access
Filename | Description | Size | |||
---|---|---|---|---|---|
06663862.pdf | Published version | 278.2 kB |
Copyright Clearance Process
- Recently Added
- In Progress
- Closed Access
This item is closed access and not available.
For transceiver design in low cost CMOS technologies, one of the most challenging elements is the voltage controlled oscillator (VCO), especially if designed for low power. A VCO has been designed and measured where a MOS transistor is used as a varactor, as part of strategy to obtain the wide tuning range of 500MHz. Phase noise was measured and found to be -111dBc/Hz at 1MHz offset at an oscillation frequency of 3.2GHz. The VCO, implemented in 0.25μm Silicon on Sapphire (SOS) CMOS, consumes 600μW of DC power from a 1.2V source and is suitable for implantable UWB applications. © 2013 IEEE.
Please use this identifier to cite or link to this item: