Asymmetrical Dead-Time Control Driver for Buck Regulator

Wu, C; Goh, WL; Kok, CL; Siek, L; Lam, YH; Zhu, X; Singh, RP

Asymmetrical Dead-Time Control Driver for Buck Regulator

Wu, C Goh, WL Kok, CL Siek, L Lam, YH Zhu, X

Singh, RP

Permalink

Publication Type:: Journal Article
Citation:: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2016, 24 (12), pp. 3543 - 3547
Issue Date:: 2016-12-01

Closed Access

	Filename	Description	Size
	07458178.pdf	Published Version	1.79 MB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Wu, C	en_US
dc.contributor.author	Goh, WL	en_US
dc.contributor.author	Kok, CL	en_US
dc.contributor.author	Siek, L	en_US
dc.contributor.author	Lam, YH	en_US
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X	en_US
dc.contributor.author	Singh, RP	en_US
dc.date.issued	2016-12-01	en_US
dc.identifier.citation	IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2016, 24 (12), pp. 3543 - 3547	en_US
dc.identifier.issn	1063-8210	en_US
dc.identifier.uri	http://hdl.handle.net/10453/122986
dc.description.abstract	© 2016 IEEE. This brief presents an asymmetrical dead-time control driver (ASDTCD) for synchronous buck converter operating in the continuous conduction mode. Dead-time control is an important metric for improving the efficiency of switching mode power regulator. Without an additional circuit, the proposed ASDTCD can generate dead time by controlling the slope for the output signal of the driver. The proposed ASDTCD utilizes the transition between triode region and saturation region for the power transistor to avoid body-diode conduction and shoot-through current while minimizing the switching loss. Thus, high-speed body-diode conduction sensor is avoided; thereby, reducing the power consumption and saving silicon area. In addition, the body-diode conduction time control accuracy is also enhanced. Less than 1-ns body-diode conduction time has been achieved without bringing in shoot-through current across 10-450-mA load range. With less than 0.5% of the total input power consumed, the proposed ASDTCD takes less than 1% of the power transistor area. This design is implemented in the 0.18 μm CMOS process.	en_US
dc.relation.ispartof	IEEE Transactions on Very Large Scale Integration (VLSI) Systems	en_US
dc.relation.isbasedon	10.1109/TVLSI.2016.2551321	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Computer Hardware & Architecture	en_US
dc.title	Asymmetrical Dead-Time Control Driver for Buck Regulator	en_US
dc.type	Journal Article
utslib.citation.volume	12	en_US
utslib.citation.volume	24	en_US
utslib.for	0805 Distributed Computing	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
utslib.for	1006 Computer Hardware	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
utslib.copyright.status	closed_access	*
pubs.issue	12	en_US
pubs.publication-status	Published	en_US
pubs.volume	24	en_US

Abstract:

© 2016 IEEE. This brief presents an asymmetrical dead-time control driver (ASDTCD) for synchronous buck converter operating in the continuous conduction mode. Dead-time control is an important metric for improving the efficiency of switching mode power regulator. Without an additional circuit, the proposed ASDTCD can generate dead time by controlling the slope for the output signal of the driver. The proposed ASDTCD utilizes the transition between triode region and saturation region for the power transistor to avoid body-diode conduction and shoot-through current while minimizing the switching loss. Thus, high-speed body-diode conduction sensor is avoided; thereby, reducing the power consumption and saving silicon area. In addition, the body-diode conduction time control accuracy is also enhanced. Less than 1-ns body-diode conduction time has been achieved without bringing in shoot-through current across 10-450-mA load range. With less than 0.5% of the total input power consumed, the proposed ASDTCD takes less than 1% of the power transistor area. This design is implemented in the 0.18 μm CMOS process.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/122986