Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): Reducing milling damage

Amjadipour, M; Macleod, J; Lipton-Duffin, J; Iacopi, F; Motta, N

Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): Reducing milling damage

Amjadipour, M Macleod, J Lipton-Duffin, J Iacopi, F

Motta, N

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Publication Type:: Journal Article
Citation:: Nanotechnology, 2017, 28 (34)
Issue Date:: 2017-07-24

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Field	Value	Language
dc.contributor.author	Amjadipour, M	en_US
dc.contributor.author	Macleod, J	en_US
dc.contributor.author	Lipton-Duffin, J	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.contributor.author	Motta, N	en_US
dc.date.issued	2017-07-24	en_US
dc.identifier.citation	Nanotechnology, 2017, 28 (34)	en_US
dc.identifier.issn	0957-4484	en_US
dc.identifier.uri	http://hdl.handle.net/10453/126971
dc.description.abstract	© 2017 IOP Publishing Ltd. Epitaxial growth of graphene on SiC is a scalable procedure that does not require any further transfer step, making this an ideal platform for graphene nanostructure fabrication. Focused ion beam (FIB) is a very promising tool for exploring the reduction of the lateral dimension of graphene on SiC to the nanometre scale. However, exposure of graphene to the Ga+ beam causes significant surface damage through amorphisation and contamination, preventing epitaxial graphene growth. In this paper we demonstrate that combining a protective silicon layer with FIB patterning implemented prior to graphene growth can significantly reduce the damage associated with FIB milling. Using this approach, we successfully achieved graphene growth over 3C-SiC/Si FIB patterned nanostructures.	en_US
dc.relation.ispartof	Nanotechnology	en_US
dc.relation.isbasedon	10.1088/1361-6528/aa752e	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): Reducing milling damage	en_US
dc.type	Journal Article
utslib.citation.volume	34	en_US
utslib.citation.volume	28	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.issue	34	en_US
pubs.publication-status	Published	en_US
pubs.volume	28	en_US

Abstract:

© 2017 IOP Publishing Ltd. Epitaxial growth of graphene on SiC is a scalable procedure that does not require any further transfer step, making this an ideal platform for graphene nanostructure fabrication. Focused ion beam (FIB) is a very promising tool for exploring the reduction of the lateral dimension of graphene on SiC to the nanometre scale. However, exposure of graphene to the Ga+ beam causes significant surface damage through amorphisation and contamination, preventing epitaxial graphene growth. In this paper we demonstrate that combining a protective silicon layer with FIB patterning implemented prior to graphene growth can significantly reduce the damage associated with FIB milling. Using this approach, we successfully achieved graphene growth over 3C-SiC/Si FIB patterned nanostructures.

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http://hdl.handle.net/10453/126971