Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy

Yang, I; Zhang, X; Zheng, C; Gao, Q; Li, Z; Li, L; Lockrey, MN; Nguyen, H; Caroff, P; Etheridge, J; Tan, HH; Jagadish, C; Wong-Leung, J; Fu, L

Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy

Yang, I Zhang, X Zheng, C Gao, Q Li, Z Li, L Lockrey, MN

Nguyen, H Caroff, P Etheridge, J Tan, HH Jagadish, C Wong-Leung, J Fu, L

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Publication Type:: Journal Article
Citation:: ACS Nano, 2018
Issue Date:: 2018-01-01

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Field	Value	Language
dc.contributor.author	Yang, I	en_US
dc.contributor.author	Zhang, X	en_US
dc.contributor.author	Zheng, C	en_US
dc.contributor.author	Gao, Q	en_US
dc.contributor.author	Li, Z	en_US
dc.contributor.author	Li, L	en_US
dc.contributor.author	Lockrey, MN https://orcid.org/0000-0002-0050-2858	en_US
dc.contributor.author	Nguyen, H	en_US
dc.contributor.author	Caroff, P	en_US
dc.contributor.author	Etheridge, J	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.contributor.author	Wong-Leung, J	en_US
dc.contributor.author	Fu, L	en_US
dc.date.issued	2018-01-01	en_US
dc.identifier.citation	ACS Nano, 2018	en_US
dc.identifier.issn	1936-0851	en_US
dc.identifier.uri	http://hdl.handle.net/10453/130953
dc.description.abstract	© 2018 American Chemical Society. III-V semiconductor multi-quantum-well nanowires (MQW NWs) via selective-area epitaxy (SAE) is of great importance for the development of nanoscale light-emitting devices for applications such as optical communication, silicon photonics, and quantum computing. To achieve highly efficient light-emitting devices, not only the high-quality materials but also a deep understanding of their growth mechanisms and material properties (structural, optical, and electrical) are extremely critical. In particular, the three-dimensional growth mechanism of MQWs embedded in a NW structure by SAE is expected to be different from that of those grown in a planar structure or with a catalyst and has not yet been thoroughly investigated. In this work, we reveal a distinctive radial growth evolution of InGaAs/InP MQW NWs grown by the SAE metal organic vapor-phase epitaxy (MOVPE) technique. We observe the formation of zinc blende (ZB) QW discs induced by the axial InGaAs QW growth on the wurtzite (WZ) base-InP NW and propose it as the key factor driving the overall structure of radial growth. The role of the ZB-to-WZ change in the driving of the overall growth evolution is supported by a growth formalism, taking into account the formation-energy difference between different facets. Despite a polytypic crystal structure with mixed ZB and WZ phases across the MQW region, the NWs exhibit high uniformity and desirable QW spatial layout with bright room-temperature photoluminescence at an optical communication wavelength of ∼1.3 μm, which is promising for the future development of high-efficiency light-emitting devices.	en_US
dc.relation.ispartof	ACS Nano	en_US
dc.relation.isbasedon	10.1021/acsnano.8b05771	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy	en_US
dc.type	Journal Article
utslib.for	1007 Nanotechnology	en_US
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US

Abstract:

© 2018 American Chemical Society. III-V semiconductor multi-quantum-well nanowires (MQW NWs) via selective-area epitaxy (SAE) is of great importance for the development of nanoscale light-emitting devices for applications such as optical communication, silicon photonics, and quantum computing. To achieve highly efficient light-emitting devices, not only the high-quality materials but also a deep understanding of their growth mechanisms and material properties (structural, optical, and electrical) are extremely critical. In particular, the three-dimensional growth mechanism of MQWs embedded in a NW structure by SAE is expected to be different from that of those grown in a planar structure or with a catalyst and has not yet been thoroughly investigated. In this work, we reveal a distinctive radial growth evolution of InGaAs/InP MQW NWs grown by the SAE metal organic vapor-phase epitaxy (MOVPE) technique. We observe the formation of zinc blende (ZB) QW discs induced by the axial InGaAs QW growth on the wurtzite (WZ) base-InP NW and propose it as the key factor driving the overall structure of radial growth. The role of the ZB-to-WZ change in the driving of the overall growth evolution is supported by a growth formalism, taking into account the formation-energy difference between different facets. Despite a polytypic crystal structure with mixed ZB and WZ phases across the MQW region, the NWs exhibit high uniformity and desirable QW spatial layout with bright room-temperature photoluminescence at an optical communication wavelength of ∼1.3 μm, which is promising for the future development of high-efficiency light-emitting devices.

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