Kinetics of charge carrier recombination in β- Ga2 O3 crystals

Huynh, TT; Lem, LLC; Kuramata, A; Phillips, MR; Ton-That, C

Kinetics of charge carrier recombination in β- Ga2 O3 crystals

Huynh, TT Lem, LLC Kuramata, A Phillips, MR

Ton-That, C

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Publication Type:: Journal Article
Citation:: Physical Review Materials, 2018, 2 (10)
Issue Date:: 2018-10-29

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Field	Value	Language
dc.contributor.author	Huynh, TT	en_US
dc.contributor.author	Lem, LLC	en_US
dc.contributor.author	Kuramata, A	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.date.issued	2018-10-29	en_US
dc.identifier.citation	Physical Review Materials, 2018, 2 (10)	en_US
dc.identifier.uri	http://hdl.handle.net/10453/131319
dc.description.abstract	© 2018 American Physical Society. Cathodoluminescence (CL) spectra were measured to determine the characteristics of luminescence bands and carrier dynamics in β-Ga2O3 bulk single crystals. The CL emission was found to be dominated by a broad UV emission peaked at 3.40 eV, which exhibits strong quenching with increasing temperature; however, its spectral shape and energy position remain virtually unchanged. We observed a superlinear increase of CL intensity with excitation density; this kinetics of carrier recombination can be explained in terms of carrier trapping and charge transfer at Fe impurity centers. The temperature-dependent properties of this UV band are consistent with weakly bound electrons in self-trapped excitons with an activation energy of 48±10meV. In addition to the self-trapped exciton emission, a blue luminescence (BL) band is shown to be related to a donor-like defect, which increases significantly in concentration after hydrogen plasma annealing. The point defect responsible for the BL, likely an oxygen vacancy, is strongly coupled to the lattice exhibiting a Huang-Rhys factor of ∼7.3.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP150103317
dc.relation.ispartof	Physical Review Materials	en_US
dc.relation.isbasedon	10.1103/PhysRevMaterials.2.105203	en_US
dc.title	Kinetics of charge carrier recombination in β- Ga2 O3 crystals	en_US
dc.type	Journal Article
utslib.citation.volume	10	en_US
utslib.citation.volume	2	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	open_access
pubs.issue	10	en_US
pubs.publication-status	Published	en_US
pubs.volume	2	en_US

Abstract:

© 2018 American Physical Society. Cathodoluminescence (CL) spectra were measured to determine the characteristics of luminescence bands and carrier dynamics in β-Ga2O3 bulk single crystals. The CL emission was found to be dominated by a broad UV emission peaked at 3.40 eV, which exhibits strong quenching with increasing temperature; however, its spectral shape and energy position remain virtually unchanged. We observed a superlinear increase of CL intensity with excitation density; this kinetics of carrier recombination can be explained in terms of carrier trapping and charge transfer at Fe impurity centers. The temperature-dependent properties of this UV band are consistent with weakly bound electrons in self-trapped excitons with an activation energy of 48±10meV. In addition to the self-trapped exciton emission, a blue luminescence (BL) band is shown to be related to a donor-like defect, which increases significantly in concentration after hydrogen plasma annealing. The point defect responsible for the BL, likely an oxygen vacancy, is strongly coupled to the lattice exhibiting a Huang-Rhys factor of ∼7.3.

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http://hdl.handle.net/10453/131319