Strong Depletion in Hybrid Perovskite p–n Junctions Induced by Local Electronic Doping

Ou, Q; Zhang, Y; Wang, Z; Yuwono, JA; Wang, R; Dai, Z; Li, W; Zheng, C; Xu, ZQ; Qi, X; Duhm, S; Medhekar, NV; Zhang, H; Bao, Q

Strong Depletion in Hybrid Perovskite p–n Junctions Induced by Local Electronic Doping

Ou, Q Zhang, Y Wang, Z Yuwono, JA Wang, R Dai, Z Li, W Zheng, C Xu, ZQ

Qi, X Duhm, S Medhekar, NV Zhang, H Bao, Q

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Publication Type:: Journal Article
Citation:: Advanced Materials, 2018, 30 (15)
Issue Date:: 2018-04-12

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Field	Value	Language
dc.contributor.author	Ou, Q	en_US
dc.contributor.author	Zhang, Y	en_US
dc.contributor.author	Wang, Z	en_US
dc.contributor.author	Yuwono, JA	en_US
dc.contributor.author	Wang, R	en_US
dc.contributor.author	Dai, Z	en_US
dc.contributor.author	Li, W	en_US
dc.contributor.author	Zheng, C	en_US
dc.contributor.author	Xu, ZQ https://orcid.org/0000-0001-7291-1426	en_US
dc.contributor.author	Qi, X	en_US
dc.contributor.author	Duhm, S	en_US
dc.contributor.author	Medhekar, NV	en_US
dc.contributor.author	Zhang, H	en_US
dc.contributor.author	Bao, Q	en_US
dc.date.issued	2018-04-12	en_US
dc.identifier.citation	Advanced Materials, 2018, 30 (15)	en_US
dc.identifier.issn	0935-9648	en_US
dc.identifier.uri	http://hdl.handle.net/10453/133995
dc.description.abstract	© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim A semiconductor p–n junction typically has a doping-induced carrier depletion region, where the doping level positively correlates with the built-in potential and negatively correlates with the depletion layer width. In conventional bulk and atomically thin junctions, this correlation challenges the synergy of the internal field and its spatial extent in carrier generation/transport. Organic–inorganic hybrid perovskites, a class of crystalline ionic semiconductors, are promising alternatives because of their direct badgap, long diffusion length, and large dielectric constant. Here, strong depletion in a lateral p–n junction induced by local electronic doping at the surface of individual CH3NH3PbI3 perovskite nanosheets is reported. Unlike conventional surface doping with a weak van der Waals adsorption, covalent bonding and hydrogen bonding between a MoO3 dopant and the perovskite are theoretically predicted and experimentally verified. The strong hybridization-induced electronic coupling leads to an enhanced built-in electric field. The large electric permittivity arising from the ionic polarizability further contributes to the formation of an unusually broad depletion region up to 10 µm in the junction. Under visible optical excitation without electrical bias, the lateral diode demonstrates unprecedented photovoltaic conversion with an external quantum efficiency of 3.93% and a photodetection responsivity of 1.42 A W−1.	en_US
dc.relation.ispartof	Advanced Materials	en_US
dc.relation.isbasedon	10.1002/adma.201705792	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Strong Depletion in Hybrid Perovskite p–n Junctions Induced by Local Electronic Doping	en_US
dc.type	Journal Article
utslib.citation.volume	15	en_US
utslib.citation.volume	30	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	15	en_US
pubs.publication-status	Published	en_US
pubs.volume	30	en_US

Abstract:

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim A semiconductor p–n junction typically has a doping-induced carrier depletion region, where the doping level positively correlates with the built-in potential and negatively correlates with the depletion layer width. In conventional bulk and atomically thin junctions, this correlation challenges the synergy of the internal field and its spatial extent in carrier generation/transport. Organic–inorganic hybrid perovskites, a class of crystalline ionic semiconductors, are promising alternatives because of their direct badgap, long diffusion length, and large dielectric constant. Here, strong depletion in a lateral p–n junction induced by local electronic doping at the surface of individual CH3NH3PbI3 perovskite nanosheets is reported. Unlike conventional surface doping with a weak van der Waals adsorption, covalent bonding and hydrogen bonding between a MoO3 dopant and the perovskite are theoretically predicted and experimentally verified. The strong hybridization-induced electronic coupling leads to an enhanced built-in electric field. The large electric permittivity arising from the ionic polarizability further contributes to the formation of an unusually broad depletion region up to 10 µm in the junction. Under visible optical excitation without electrical bias, the lateral diode demonstrates unprecedented photovoltaic conversion with an external quantum efficiency of 3.93% and a photodetection responsivity of 1.42 A W−1.

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http://hdl.handle.net/10453/133995