Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes

Yang, I; Li, Z; Wong-Leung, J; Zhu, Y; Gagrani, N; Li, L; Lockrey, MN; Nguyen, H; Lu, Y; Tan, HH; Jagadish, C; Fu, L

Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes

Yang, I Li, Z Wong-Leung, J Zhu, Y Gagrani, N Li, L Lockrey, MN

Nguyen, H Lu, Y Tan, HH Jagadish, C Fu, L

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Publication Type:: Journal Article
Citation:: Nano Letters, 2019, 19 (6), pp. 3821 - 3829
Issue Date:: 2019-06-12

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Field	Value	Language
dc.contributor.author	Yang, I	en_US
dc.contributor.author	Li, Z	en_US
dc.contributor.author	Wong-Leung, J	en_US
dc.contributor.author	Zhu, Y	en_US
dc.contributor.author	Gagrani, N	en_US
dc.contributor.author	Li, L	en_US
dc.contributor.author	Lockrey, MN https://orcid.org/0000-0002-0050-2858	en_US
dc.contributor.author	Nguyen, H	en_US
dc.contributor.author	Lu, Y	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.contributor.author	Fu, L	en_US
dc.date.issued	2019-06-12	en_US
dc.identifier.citation	Nano Letters, 2019, 19 (6), pp. 3821 - 3829	en_US
dc.identifier.issn	1530-6984	en_US
dc.identifier.uri	http://hdl.handle.net/10453/135967
dc.description.abstract	© 2019 American Chemical Society. We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the single InGaAs/InP quantum well embedded in the nanowire consists of three components with different chemical compositions, axial quantum well, ring quantum well, and radial quantum well, leading to the electroluminescence emission with multiple wavelengths. The electroluminescence measurements show a strong dependence on current injection levels as well as temperatures and these are explained by interpreting the equivalent circuits in a minimized area of the device. It is also found that the electroluminescence properties are closely related to the distinctive triangular morphology with an inclined facet of the quantum well nanowire. Our study provides important new insights for further design, growth, and fabrication of high-performance quantum well-based nanowire light sources for a wide range of future optoelectronic and photonic applications.	en_US
dc.relation.ispartof	Nano Letters	en_US
dc.relation.isbasedon	10.1021/acs.nanolett.9b00959	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes	en_US
dc.type	Journal Article
utslib.citation.volume	6	en_US
utslib.citation.volume	19	en_US
utslib.for	1007 Nanotechnology	en_US
utslib.for	0206 Quantum Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
utslib.copyright.status	closed_access
pubs.issue	6	en_US
pubs.publication-status	Published	en_US
pubs.volume	19	en_US

Abstract:

© 2019 American Chemical Society. We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the single InGaAs/InP quantum well embedded in the nanowire consists of three components with different chemical compositions, axial quantum well, ring quantum well, and radial quantum well, leading to the electroluminescence emission with multiple wavelengths. The electroluminescence measurements show a strong dependence on current injection levels as well as temperatures and these are explained by interpreting the equivalent circuits in a minimized area of the device. It is also found that the electroluminescence properties are closely related to the distinctive triangular morphology with an inclined facet of the quantum well nanowire. Our study provides important new insights for further design, growth, and fabrication of high-performance quantum well-based nanowire light sources for a wide range of future optoelectronic and photonic applications.

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http://hdl.handle.net/10453/135967