Selective Defect Formation in Hexagonal Boron Nitride

Abidi, IH; Mendelson, N; Tran, TT; Tyagi, A; Zhuang, M; Weng, LT; Özyilmaz, B; Aharonovich, I; Toth, M; Luo, Z

Selective Defect Formation in Hexagonal Boron Nitride

Abidi, IH Mendelson, N

Tran, TT

Tyagi, A Zhuang, M Weng, LT Özyilmaz, B Aharonovich, I

Toth, M

Luo, Z

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Publication Type:: Journal Article
Citation:: Advanced Optical Materials, 2019, 7 (13)
Issue Date:: 2019-07-04

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Field	Value	Language
dc.contributor.author	Abidi, IH	en_US
dc.contributor.author	Mendelson, N https://orcid.org/0000-0002-6695-7556	en_US
dc.contributor.author	Tran, TT https://orcid.org/0000-0001-8960-0253	en_US
dc.contributor.author	Tyagi, A	en_US
dc.contributor.author	Zhuang, M	en_US
dc.contributor.author	Weng, LT	en_US
dc.contributor.author	Özyilmaz, B	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Luo, Z	en_US
dc.date.issued	2019-07-04	en_US
dc.identifier.citation	Advanced Optical Materials, 2019, 7 (13)	en_US
dc.identifier.uri	http://hdl.handle.net/10453/136507
dc.description.abstract	© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Luminescent defects in hexagonal boron nitride (hBN) have emerged as promising single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone toward their integration into on-chip photonic architectures. Here, an effective approach is reported to fabricate hBN SPEs with desired emission properties in distinct spectral regions via the manipulation of boron diffusion through copper during atmospheric pressure chemical vapor deposition (CVD)—a process termed gettering. Using the gettering technique the resulting zero-phonon line is deterministically placed between the regions 550 and 600 nm or from 600 to 650 nm, paving the way for hBN SPEs with tailored emission properties. Additionally, rational control over the observed SPE density in the resulting films is demonstrated. The ability to control defect formation during hBN growth provides a cost effective means to improve the crystallinity of CVD hBN films, and lower defect density making it applicable to hBN growth for a wide-range of applications. The results are important to understand defect formation of quantum emitters in hBN and deploy them for scalable photonic technologies.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP180100077
dc.relation	http://purl.org/au-research/grants/arc/DP190101058
dc.relation.ispartof	Advanced Optical Materials	en_US
dc.relation.isbasedon	10.1002/adom.201900397	en_US
dc.title	Selective Defect Formation in Hexagonal Boron Nitride	en_US
dc.type	Journal Article
utslib.citation.volume	13	en_US
utslib.citation.volume	7	en_US
utslib.for	0303 Macromolecular and Materials Chemistry	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	/University of Technology Sydney/Students
utslib.copyright.status	closed_access
pubs.issue	13	en_US
pubs.publication-status	Published	en_US
pubs.volume	7	en_US

Abstract:

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Luminescent defects in hexagonal boron nitride (hBN) have emerged as promising single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone toward their integration into on-chip photonic architectures. Here, an effective approach is reported to fabricate hBN SPEs with desired emission properties in distinct spectral regions via the manipulation of boron diffusion through copper during atmospheric pressure chemical vapor deposition (CVD)—a process termed gettering. Using the gettering technique the resulting zero-phonon line is deterministically placed between the regions 550 and 600 nm or from 600 to 650 nm, paving the way for hBN SPEs with tailored emission properties. Additionally, rational control over the observed SPE density in the resulting films is demonstrated. The ability to control defect formation during hBN growth provides a cost effective means to improve the crystallinity of CVD hBN films, and lower defect density making it applicable to hBN growth for a wide-range of applications. The results are important to understand defect formation of quantum emitters in hBN and deploy them for scalable photonic technologies.

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http://hdl.handle.net/10453/136507