P-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies

Pradeepkumar, A; Amjadipour, M; Mishra, N; Liu, C; Fuhrer, MS; Bendavid, A; Isa, F; Zielinski, M; Sirikumara, HI; Jayasekara, T; Gaskill, DK; Iacopi, F

P-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies

Amjadipour, M Mishra, N Liu, C Fuhrer, MS Bendavid, A Isa, F Zielinski, M Sirikumara, HI Jayasekara, T Gaskill, DK Iacopi, F

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Publication Type:: Journal Article
Citation:: ACS Applied Nano Materials, 2020, 3 (1), pp. 830 - 841
Issue Date:: 2020-01-24

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Field	Value	Language
dc.contributor.author	Pradeepkumar, A https://orcid.org/0000-0003-0669-5459	en_US
dc.contributor.author	Amjadipour, M	en_US
dc.contributor.author	Mishra, N	en_US
dc.contributor.author	Liu, C	en_US
dc.contributor.author	Fuhrer, MS	en_US
dc.contributor.author	Bendavid, A	en_US
dc.contributor.author	Isa, F	en_US
dc.contributor.author	Zielinski, M	en_US
dc.contributor.author	Sirikumara, HI	en_US
dc.contributor.author	Jayasekara, T	en_US
dc.contributor.author	Gaskill, DK	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.date.available	2021-01-24T18:06:04Z
dc.date.issued	2020-01-24	en_US
dc.identifier.citation	ACS Applied Nano Materials, 2020, 3 (1), pp. 830 - 841	en_US
dc.identifier.uri	http://hdl.handle.net/10453/139252
dc.description.abstract	Copyright © 2019 American Chemical Society. The synthesis of graphene on cubic silicon carbide on silicon pseudosubstrates draws enormous interest due to the potential integration of the 2D material with the well-established silicon technology and processing. However, the control of transport properties over large scales on this platform, essential for integrated electronics and photonics applications, has lagged behind so far, due to limitations such as 3C-SiC/Si interface instability and nonuniform graphene coverage. We address these issues by obtaining an epitaxial graphene (EG) onto 3C-SiC on a highly resistive silicon substrate using an alloy-mediated, solid-source graphene synthesis. We report the transport properties of EG grown over large areas directly on 3C-SiC(100) and 3C-SiC(111) substrates, and we present the corresponding physical models. We observe that the carrier transport of EG/3C-SiC is dominated by the graphene-substrate interaction rather than the EG grain size, sharing the same conductivity and same inverse power law as EG on 4H- or 6H-SiC(0001) substrates - although the grain sizes for the latter are vastly different. In addition, we show that the induced oxidation/silicates at the EG/3C-SiC interface generate a p-type charge in this graphene, particularly high for the EG/3C-SiC(001). When silicates are at the interface, the presence of a buffer layer in the EG/3C-SiC(111) system is found to reduce somewhat the charge transfer. This work also indicates that a renewed focus on the understanding and engineering of the EG interfaces could very well enable the long sought-after graphene-based electronics and photonics integrated on silicon.	en_US
dc.relation.ispartof	ACS Applied Nano Materials	en_US
dc.relation.isbasedon	10.1021/acsanm.9b02349	en_US
dc.rights	This document is the Accepted Manuscript version of a Published Work that appeared in final form in [ACS Applied Nano Materials], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [https://pubs.acs.org/doi/10.1021/acsanm.9b02349], see http://pubs.acs.org/page/policy/articlesonrequest/index.html].”
dc.rights	info:eu-repo/semantics/openAccess
dc.title	P-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies	en_US
dc.type	Journal Article
utslib.citation.volume	1	en_US
utslib.citation.volume	3	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	open_access	*
pubs.issue	1	en_US
pubs.publication-status	Published	en_US
pubs.volume	3	en_US

Abstract:

Copyright © 2019 American Chemical Society. The synthesis of graphene on cubic silicon carbide on silicon pseudosubstrates draws enormous interest due to the potential integration of the 2D material with the well-established silicon technology and processing. However, the control of transport properties over large scales on this platform, essential for integrated electronics and photonics applications, has lagged behind so far, due to limitations such as 3C-SiC/Si interface instability and nonuniform graphene coverage. We address these issues by obtaining an epitaxial graphene (EG) onto 3C-SiC on a highly resistive silicon substrate using an alloy-mediated, solid-source graphene synthesis. We report the transport properties of EG grown over large areas directly on 3C-SiC(100) and 3C-SiC(111) substrates, and we present the corresponding physical models. We observe that the carrier transport of EG/3C-SiC is dominated by the graphene-substrate interaction rather than the EG grain size, sharing the same conductivity and same inverse power law as EG on 4H- or 6H-SiC(0001) substrates - although the grain sizes for the latter are vastly different. In addition, we show that the induced oxidation/silicates at the EG/3C-SiC interface generate a p-type charge in this graphene, particularly high for the EG/3C-SiC(001). When silicates are at the interface, the presence of a buffer layer in the EG/3C-SiC(111) system is found to reduce somewhat the charge transfer. This work also indicates that a renewed focus on the understanding and engineering of the EG interfaces could very well enable the long sought-after graphene-based electronics and photonics integrated on silicon.

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http://hdl.handle.net/10453/139252