Observation of near-infrared sub-Poissonian photon emission in hexagonal boron nitride at room temperature

Camphausen, R; Marini, L; Tawfik, SA; Tran, TT; Ford, MJ; Palomba, S

Observation of near-infrared sub-Poissonian photon emission in hexagonal boron nitride at room temperature

Camphausen, R Marini, L Tawfik, SA Tran, TT Ford, MJ Palomba, S

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Publisher:: AMER INST PHYSICS
Publication Type:: Journal Article
Citation:: APL Photonics, 2020, 5, (7)
Issue Date:: 2020-07-01

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Field	Value	Language
dc.contributor.author	Camphausen, R
dc.contributor.author	Marini, L
dc.contributor.author	Tawfik, SA
dc.contributor.author	Tran, TT
dc.contributor.author	Ford, MJ
dc.contributor.author	Palomba, S
dc.date.accessioned	2020-09-19T07:28:47Z
dc.date.available	2021-08-12T19:01:09Z
dc.date.issued	2020-07-01
dc.identifier.citation	APL Photonics, 2020, 5, (7)
dc.identifier.issn	2378-0967
dc.identifier.issn	2378-0967
dc.identifier.uri	http://hdl.handle.net/10453/142760
dc.description.abstract	© 2020 Author(s). The generation of non-classical light states in the near-infrared (NIR) is important for a number of photonic quantum technologies. Here, we report the first experimental observation of sub-Poissonian NIR (1.24 eV) light emission from defects in a 2D hexagonal boron nitride (hBN) sheet at room temperature. Photoluminescence statistics shows g(2)(0) = 0.6, which is a signature of the quantum nature of the emission. Density functional-theory calculations, at the level of the generalized gradient approximation, for the negatively charged nitrogen anti-site lattice defects are consistent with the observed emission energy. This work demonstrates that the defects in hBN could be a promising platform for single-photon generation in the NIR.
dc.language	English
dc.publisher	AMER INST PHYSICS
dc.relation.ispartof	APL Photonics
dc.relation.isbasedon	10.1063/5.0008242
dc.rights	The following article has been submitted to/accepted by [APL Photonics After it is published, it will be found at (https://aip.scitation.org/doi/10.1063/5.0008242)
dc.rights	info:eu-repo/semantics/embargoedAccess
dc.subject	0205 Optical Physics
dc.title	Observation of near-infrared sub-Poissonian photon emission in hexagonal boron nitride at room temperature
dc.type	Journal Article
utslib.citation.volume	5
utslib.for	0205 Optical Physics
pubs.organisational-group	/University of Technology Sydney/DVC (Research)
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access	*
dc.date.updated	2020-09-19T07:28:41Z
pubs.issue	7
pubs.publication-status	Published
pubs.volume	5
utslib.citation.issue	7

Abstract:

© 2020 Author(s). The generation of non-classical light states in the near-infrared (NIR) is important for a number of photonic quantum technologies. Here, we report the first experimental observation of sub-Poissonian NIR (1.24 eV) light emission from defects in a 2D hexagonal boron nitride (hBN) sheet at room temperature. Photoluminescence statistics shows g(2)(0) = 0.6, which is a signature of the quantum nature of the emission. Density functional-theory calculations, at the level of the generalized gradient approximation, for the negatively charged nitrogen anti-site lattice defects are consistent with the observed emission energy. This work demonstrates that the defects in hBN could be a promising platform for single-photon generation in the NIR.

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http://hdl.handle.net/10453/142760