Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride

Mendelson, N; Morales-Inostroza, L; Li, C; Ritika, R; Nguyen, MAP; Loyola-Echeverria, J; Kim, S; Götzinger, S; Toth, M; Aharonovich, I

Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride

Mendelson, N Morales-Inostroza, L Li, C Ritika, R Nguyen, MAP Loyola-Echeverria, J Kim, S Götzinger, S Toth, M Aharonovich, I

Permalink

Publisher:: Wiley
Publication Type:: Journal Article
Citation:: Advanced Optical Materials, 2020, pp. 2001271-2001271
Issue Date:: 2020-01-01

Closed Access

	Filename	Description	Size
	adom.202001271.pdf	Accepted version	1.69 MB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Mendelson, N
dc.contributor.author	Morales-Inostroza, L
dc.contributor.author	Li, C
dc.contributor.author	Ritika, R
dc.contributor.author	Nguyen, MAP
dc.contributor.author	Loyola-Echeverria, J
dc.contributor.author	Kim, S
dc.contributor.author	Götzinger, S
dc.contributor.author	Toth, M
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.date.accessioned	2020-12-14T05:43:04Z
dc.date.available	2020-12-14T05:43:04Z
dc.date.issued	2020-01-01
dc.identifier.citation	Advanced Optical Materials, 2020, pp. 2001271-2001271
dc.identifier.issn	2195-1071
dc.identifier.issn	2195-1071
dc.identifier.uri	http://hdl.handle.net/10453/144684
dc.description.abstract	© 2020 Wiley-VCH GmbH Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, the incorporation of quantum emitters during chemical vapor deposition growth on a nickel substrate is studied. Combining a range of characterization techniques, it is demonstrated that the incorporation of quantum emitters is limited to (001) oriented nickel grains. Such emitters display improved emission properties in terms of brightness and stability. These emitters are further utilized and integrated with a compact optical antenna enhancing light collection from the sources. The hybrid device yields average saturation count rates of ≈2.9 × 106 cps and an average photon purity of g(2)(0) ≈ 0.1. The results advance the understanding of single photon emitter incorporation during chemical vapor deposition growth and demonstrate a key step towards compact devices for achieving maximum collection efficiency.
dc.language	en
dc.publisher	Wiley
dc.relation	http://purl.org/au-research/grants/arc/DP180100077
dc.relation	http://purl.org/au-research/grants/arc/DP190101058
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation.ispartof	Advanced Optical Materials
dc.relation.isbasedon	10.1002/adom.202001271
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.subject	0205 Optical Physics, 0906 Electrical and Electronic Engineering, 0912 Materials Engineering
dc.title	Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride
dc.type	Journal Article
utslib.for	0205 Optical Physics
utslib.for	0906 Electrical and Electronic Engineering
utslib.for	0912 Materials Engineering
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney
utslib.copyright.status	closed_access	*
dc.date.updated	2020-12-14T05:42:58Z
pubs.publication-status	Published

Abstract:

© 2020 Wiley-VCH GmbH Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, the incorporation of quantum emitters during chemical vapor deposition growth on a nickel substrate is studied. Combining a range of characterization techniques, it is demonstrated that the incorporation of quantum emitters is limited to (001) oriented nickel grains. Such emitters display improved emission properties in terms of brightness and stability. These emitters are further utilized and integrated with a compact optical antenna enhancing light collection from the sources. The hybrid device yields average saturation count rates of ≈2.9 × 106 cps and an average photon purity of g(2)(0) ≈ 0.1. The results advance the understanding of single photon emitter incorporation during chemical vapor deposition growth and demonstrate a key step towards compact devices for achieving maximum collection efficiency.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/144684