Phase change vanadium dioxide light sensors

Kabir, S; Nirantar, S; Zhu, L; Ton-That, C; Jain, SK; Kayani, ABA; Murdoch, BJ; Sriram, S; Walia, S; Bhaskaran, M

Phase change vanadium dioxide light sensors

Kabir, S Nirantar, S Zhu, L Ton-That, C

Jain, SK Kayani, ABA Murdoch, BJ Sriram, S Walia, S Bhaskaran, M

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Publisher:: ELSEVIER
Publication Type:: Journal Article
Citation:: Applied Materials Today, 2020, 21
Issue Date:: 2020-12-01

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Field	Value	Language
dc.contributor.author	Kabir, S
dc.contributor.author	Nirantar, S
dc.contributor.author	Zhu, L
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739
dc.contributor.author	Jain, SK
dc.contributor.author	Kayani, ABA
dc.contributor.author	Murdoch, BJ
dc.contributor.author	Sriram, S
dc.contributor.author	Walia, S
dc.contributor.author	Bhaskaran, M
dc.date.accessioned	2021-01-12T04:31:42Z
dc.date.available	2021-01-12T04:31:42Z
dc.date.issued	2020-12-01
dc.identifier.citation	Applied Materials Today, 2020, 21
dc.identifier.issn	2352-9415
dc.identifier.issn	2352-9407
dc.identifier.uri	http://hdl.handle.net/10453/145329
dc.description.abstract	© 2020 Vanadium dioxide (VO2) has drawn significant attention due to a unique band-structure and multifaceted optoelectronic properties. However, VO2-based photodetectors reported till date involve complex structures and/or constrained wavelength response. Moreover, there is limited understanding of parameters which control the insulator-to-metal transition (IMT) and photoresponse in VO2. In this work, we present VO2 based two-terminal planar devices and explore the size-dependency of IMT and photoresponse in VO2 devices. We investigate the photoresponse of VO2 devices at a broadband range from ultra-violet to near infrared at three temperature regions: room temperature, IMT slope, and beyond IMT slope. We further postulate the mechanism for photoresponse at all three temperature regions. A significant enhancement in photoresponse and figure of merit of photodetectors is achieved beyond IMT slope region. An intermediate state driven by deep level defects assists the broadband photoresponse which is supported by cathodoluminescence (CL) analysis. The ability to manipulate the IMT and the broadband photoresponse opens opportunities for designing and controlling functional domains of VO2 for scalable micro- and nano-scale devices and sensor applications.
dc.language	English
dc.publisher	ELSEVIER
dc.relation	The Australian Academy of Technology and Engineering509508216
dc.relation.ispartof	Applied Materials Today
dc.relation.isbasedon	10.1016/j.apmt.2020.100833
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.subject	0204 Condensed Matter Physics, 0912 Materials Engineering, 1007 Nanotechnology
dc.title	Phase change vanadium dioxide light sensors
dc.type	Journal Article
utslib.citation.volume	21
utslib.for	0204 Condensed Matter Physics
utslib.for	0912 Materials Engineering
utslib.for	1007 Nanotechnology
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2021-01-12T04:31:36Z
pubs.publication-status	Published
pubs.volume	21

Abstract:

© 2020 Vanadium dioxide (VO2) has drawn significant attention due to a unique band-structure and multifaceted optoelectronic properties. However, VO2-based photodetectors reported till date involve complex structures and/or constrained wavelength response. Moreover, there is limited understanding of parameters which control the insulator-to-metal transition (IMT) and photoresponse in VO2. In this work, we present VO2 based two-terminal planar devices and explore the size-dependency of IMT and photoresponse in VO2 devices. We investigate the photoresponse of VO2 devices at a broadband range from ultra-violet to near infrared at three temperature regions: room temperature, IMT slope, and beyond IMT slope. We further postulate the mechanism for photoresponse at all three temperature regions. A significant enhancement in photoresponse and figure of merit of photodetectors is achieved beyond IMT slope region. An intermediate state driven by deep level defects assists the broadband photoresponse which is supported by cathodoluminescence (CL) analysis. The ability to manipulate the IMT and the broadband photoresponse opens opportunities for designing and controlling functional domains of VO2 for scalable micro- and nano-scale devices and sensor applications.

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http://hdl.handle.net/10453/145329