Ka-band marchand balun with edge-and broadside-coupled hybrid configuration

Yan, J; Liu, H; Zhu, X; Men, K; Yeo, KS

Ka-band marchand balun with edge-and broadside-coupled hybrid configuration

Yan, J Liu, H Zhu, X

Men, K Yeo, KS

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Publisher:: MDPI AG
Publication Type:: Journal Article
Citation:: Electronics (Switzerland), 2020, 9, (7), pp. 1-9
Issue Date:: 2020-07-01

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Field	Value	Language
dc.contributor.author	Yan, J
dc.contributor.author	Liu, H
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X
dc.contributor.author	Men, K
dc.contributor.author	Yeo, KS
dc.date.accessioned	2021-02-24T21:00:03Z
dc.date.available	2021-02-24T21:00:03Z
dc.date.issued	2020-07-01
dc.identifier.citation	Electronics (Switzerland), 2020, 9, (7), pp. 1-9
dc.identifier.issn	1450-5843
dc.identifier.issn	2079-9292
dc.identifier.uri	http://hdl.handle.net/10453/146414
dc.description.abstract	© 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article presents a novel Ka-band Marchand balun implemented in 0.13-µm SiGe bipolar complementary metal–oxide–semiconductor (BiCMOS) process. By combining both edge-and broadside-coupled structures, the new hybrid balun is able to increase the coupling and minimize the balun insertion loss. As compared with conventional edge-coupled or broadside-coupled structures, the proposed balun achieves the lowest insertion loss of 1.02 dB across a wide 1-dB bandwidth from 29.0 GHz to 46.0 GHz, with a core size of 270 µm × 280 µm.
dc.language	en
dc.publisher	MDPI AG
dc.relation.ispartof	Electronics (Switzerland)
dc.relation.isbasedon	10.3390/electronics9071116
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	0906 Electrical and Electronic Engineering
dc.title	Ka-band marchand balun with edge-and broadside-coupled hybrid configuration
dc.type	Journal Article
utslib.citation.volume	9
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney
utslib.copyright.status	open_access	*
dc.date.updated	2021-02-24T21:00:00Z
pubs.issue	7
pubs.publication-status	Published
pubs.volume	9
utslib.citation.issue	7

Abstract:

© 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article presents a novel Ka-band Marchand balun implemented in 0.13-µm SiGe bipolar complementary metal–oxide–semiconductor (BiCMOS) process. By combining both edge-and broadside-coupled structures, the new hybrid balun is able to increase the coupling and minimize the balun insertion loss. As compared with conventional edge-coupled or broadside-coupled structures, the proposed balun achieves the lowest insertion loss of 1.02 dB across a wide 1-dB bandwidth from 29.0 GHz to 46.0 GHz, with a core size of 270 µm × 280 µm.

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http://hdl.handle.net/10453/146414