A 60 GHz 8-Way Combined Power Amplifier in 0.18 μm SiGe BiCMOS
- Publisher:
- Institute of Electrical and Electronics Engineers
- Publication Type:
- Journal Article
- Citation:
- IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 68, (6), pp. 1847-1851
- Issue Date:
- 2021
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Filename | Description | Size | |||
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A_60_GHz_8-Way_Combined_Power_Amplifier_in_0.18_m_SiGe_BiCMOS.pdf | Published version | 2.16 MB |
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IEEE A 60 GHz fully-integrated 8-way combined power amplifier (PA) is developed in a standard 0.18 μm SiGe BiCMOS technology. The 8-way power splitter and combiner are co-optimized with transformer based baluns inside the eight differential PA cells, and hence resulting in minimum loss and high gain, linearity and efficiency. The measurement shows that the PA can achieve a gain of 22.2 dB around 60 GHz and 3-dB bandwidth from 53.5 GHz to 66.5 GHz, which covers all the channels specified in IEEE 802.11ad standard. It also attains a 1-dB power compression point (P1dB) of 21.8 dBm and saturated output power (PSAT) of 22.6 dBm, with power-added-efficiency of 10.7% and 12%, respectively.
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