Growth, Characterization and technological applications of semiconductor SnO <inf>2</inf> nanotubes and In <inf>2</inf>O <inf>3</inf> nanowires

Wang, GX; Park, JS; Park, MS

Growth, Characterization and technological applications of semiconductor SnO <inf>2</inf> nanotubes and In <inf>2</inf>O <inf>3</inf> nanowires

Wang, GX

Park, JS Park, MS

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Publication Type:: Journal Article
Citation:: Journal of Nanoscience and Nanotechnology, 2009, 9 (2), pp. 1144 - 1147
Issue Date:: 2009-02-01

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Field	Value	Language
dc.contributor.author	Wang, GX https://orcid.org/0000-0003-4295-8578	en_US
dc.contributor.author	Park, JS	en_US
dc.contributor.author	Park, MS	en_US
dc.date.issued	2009-02-01	en_US
dc.identifier.citation	Journal of Nanoscience and Nanotechnology, 2009, 9 (2), pp. 1144 - 1147	en_US
dc.identifier.issn	1533-4880	en_US
dc.identifier.uri	http://hdl.handle.net/10453/15478
dc.description.abstract	Tin dioxide nanotubes (200 nm in diameter) were synthesised by the sol-gel template method. The gas sensitivity of SnO 2 nanotubes has been investigated. Due to the small grain size and large amount of grain boundary, SnO 2 nanotubes demonstrated good sensitivity in sensing ethanol gas and had an ability to detect ammonia gas without any doping or surface modification. In 2O 3 semiconductor nanowires were synthesized efficiently by the chemical vapor deposition method through carbon thermal reduction. The diameter, length and morphologies of In 2O 3 nanowires can be varied by controlling the synthetic conditions. The In 2O 3 nanowires were characterized by field emission scanning electron microscopy (FE-SEM) and high resolution transmission electron microscopy (HRTEM). The application of In203 nanowires for gas sensors was tested. Copyright © 2009 American Scientific Publishers All rights reserved.	en_US
dc.relation.ispartof	Journal of Nanoscience and Nanotechnology	en_US
dc.relation.isbasedon	10.1166/jnn.2009.C106	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Growth, Characterization and technological applications of semiconductor SnO <inf>2</inf> nanotubes and In <inf>2</inf>O <inf>3</inf> nanowires	en_US
dc.type	Journal Article
utslib.citation.volume	2	en_US
utslib.citation.volume	9	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	1007 Nanotechnology	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	2	en_US
pubs.publication-status	Published	en_US
pubs.volume	9	en_US

Abstract:

Tin dioxide nanotubes (200 nm in diameter) were synthesised by the sol-gel template method. The gas sensitivity of SnO 2 nanotubes has been investigated. Due to the small grain size and large amount of grain boundary, SnO 2 nanotubes demonstrated good sensitivity in sensing ethanol gas and had an ability to detect ammonia gas without any doping or surface modification. In 2O 3 semiconductor nanowires were synthesized efficiently by the chemical vapor deposition method through carbon thermal reduction. The diameter, length and morphologies of In 2O 3 nanowires can be varied by controlling the synthetic conditions. The In 2O 3 nanowires were characterized by field emission scanning electron microscopy (FE-SEM) and high resolution transmission electron microscopy (HRTEM). The application of In203 nanowires for gas sensors was tested. Copyright © 2009 American Scientific Publishers All rights reserved.

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