Accurate Non-linear Large Signal Physics-based Modeling for Ka-band GaN Power Amplifier Design with ASM-HEMT
- Publisher:
- IEEE
- Publication Type:
- Conference Proceeding
- Citation:
- 2021 IEEE MTT-S International Microwave Symposium (IMS), 2021, 2021-June, pp. 349-351
- Issue Date:
- 2021-10-27
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Filename | Description | Size | |||
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Accurate_Non-linear_Large_Signal_Physics-based_Modeling_for_Ka-band_GaN_Power_Amplifier_Design_with_ASM-HEMT.pdf | Published version | 3.74 MB |
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This paper presents for the first-time a physics-based non-linear large signal model for Ka-band GaN power amplifier design using the new industry standard ASM-HEMT compact model. A novel methodology combining the effectiveness and accuracy of modeling the intrinsic device region with ASM-HEMT, and distributed effects at Ka-band with electromagnetic (EM) simulations is developed. The intrinsic semiconductor region for each finger of the GaN HEMT device is modeled with ASM-HEMT, and in a multi-finger device, the single finger model is coupled with EM simulations capturing distributed effects accurately. The developed non-linear model shows excellent accuracy with measured non-linear data for a commercial GaN-HEMT device, and with measurements performed on a Ka-band MMIC power amplifier.
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