High-Gain Low-Profile Chip-Fed Resonant Cavity Antennas for Millimeter-Wave Bands

Gonzalez Marin, J; Baba, AA; Lopez Cuenca, D; Hesselbarth, J; Hashmi, RM; Esselle, KP

High-Gain Low-Profile Chip-Fed Resonant Cavity Antennas for Millimeter-Wave Bands

Gonzalez Marin, J Baba, AA Lopez Cuenca, D Hesselbarth, J Hashmi, RM Esselle, KP

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Publisher:: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Publication Type:: Journal Article
Citation:: IEEE Antennas and Wireless Propagation Letters, 2019, 18, (11), pp. 2394-2398
Issue Date:: 2019-11-01

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Field	Value	Language
dc.contributor.author	Gonzalez Marin, J
dc.contributor.author	Baba, AA
dc.contributor.author	Lopez Cuenca, D
dc.contributor.author	Hesselbarth, J
dc.contributor.author	Hashmi, RM
dc.contributor.author	Esselle, KP
dc.date.accessioned	2022-07-22T01:53:05Z
dc.date.available	2022-07-22T01:53:05Z
dc.date.issued	2019-11-01
dc.identifier.citation	IEEE Antennas and Wireless Propagation Letters, 2019, 18, (11), pp. 2394-2398
dc.identifier.issn	1536-1225
dc.identifier.issn	1548-5757
dc.identifier.uri	http://hdl.handle.net/10453/159103
dc.description.abstract	This letter demonstrates a novel integration approach to design high gain chip-fed antennas in V-band and W-band. An on-chip spherical dielectric resonator is integrated with a resonant cavity antenna, which resulted in high radiation efficiency and increased gain. The proposed approach minimizes the use of chip area and provides several advantages, such as, low profile and ease of assembly in comparison to similar antennas, reaching 17.8 dBi and 18.4 dBi gain for V-band and W-band, respectively.
dc.language	English
dc.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.relation.ispartof	IEEE Antennas and Wireless Propagation Letters
dc.relation.isbasedon	10.1109/LAWP.2019.2926791
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0906 Electrical and Electronic Engineering, 1005 Communications Technologies
dc.subject.classification	Networking & Telecommunications
dc.title	High-Gain Low-Profile Chip-Fed Resonant Cavity Antennas for Millimeter-Wave Bands
dc.type	Journal Article
utslib.citation.volume	18
utslib.for	0906 Electrical and Electronic Engineering
utslib.for	1005 Communications Technologies
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
dc.date.updated	2022-07-22T01:53:02Z
pubs.issue	11
pubs.publication-status	Published
pubs.volume	18
utslib.citation.issue	11

Abstract:

This letter demonstrates a novel integration approach to design high gain chip-fed antennas in V-band and W-band. An on-chip spherical dielectric resonator is integrated with a resonant cavity antenna, which resulted in high radiation efficiency and increased gain. The proposed approach minimizes the use of chip area and provides several advantages, such as, low profile and ease of assembly in comparison to similar antennas, reaching 17.8 dBi and 18.4 dBi gain for V-band and W-band, respectively.

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http://hdl.handle.net/10453/159103