Iso-Trapping Measurement Technique for Characterization of Self-Heating in a GaN HEMT
- Publisher:
- Institute of Electrical and Electronics Engineers
- Publication Type:
- Journal Article
- Citation:
- IEEE Transactions on Electron Devices, 2017, 64, (1), pp. 102-108
- Issue Date:
- 2017-01-01
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Iso-Trapping_Measurement_Technique_for_Characterization_of_Self-Heating_in_a_GaN_HEMT.pdf | 979.35 kB |
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The temperature response of field-effect transistors (FETs) to instantaneous power dissipation has been shown to be significant at high frequencies, even though the self-heating process has a very slow time constant. This affects intermodulation at high frequencies. A major difficulty in characterizing the self-heating process in microwave FETs is to differentiate between the self-heating and charge-trapping rates. An iso-trapping measurement technique is proposed by which it becomes possible to characterize the self-heating process in an FET in isolation from the effect of the charge-trapping process in the FET. The results of iso-trapping measurements performed on a GaN high-electron-mobility transistor are presented, and used to successfully characterize the self-heating process.
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