Luminescence of InGaN MQWs grown on misorientated GaN substrates

Nenstiel, C; Switaisky, T; Alic, M; Suski, T; Albecht, M; Phillips, MR; Hoffmann, A

Luminescence of InGaN MQWs grown on misorientated GaN substrates

Nenstiel, C Switaisky, T Alic, M Suski, T Albecht, M Phillips, MR

Hoffmann, A

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Publication Type:: Conference Proceeding
Citation:: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 2010, pp. 135 - 136
Issue Date:: 2010-12-01

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Field	Value	Language
dc.contributor.author	Nenstiel, C	en_US
dc.contributor.author	Switaisky, T	en_US
dc.contributor.author	Alic, M	en_US
dc.contributor.author	Suski, T	en_US
dc.contributor.author	Albecht, M	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Hoffmann, A	en_US
dc.date.issued	2010-12-01	en_US
dc.identifier.citation	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 2010, pp. 135 - 136	en_US
dc.identifier.isbn	9781424473328	en_US
dc.identifier.uri	http://hdl.handle.net/10453/16353
dc.description.abstract	Optoelectronic devices based on InGaN have already been commercialised, however, the Indium content is limited to around 5%. With higher Indium concentration the quantum efficiency decreases, which is thought to be due to increasing inhomogeneity. In this work it is shown that the growth of InGaN on misorientated GaN substrates forces these Indium fluctuations on a nanometre scale. Temperature dependent luminescence measurements provide information about the homogeneity of the band structure. Energy selective excitation confirms the existence of localisation centres and indicates their energetic depth. Time-resolved measurements define the lifetime of localized excitons, which provides information about radiative and nonradiative processes as well as tunnelling mechanisms between the localization centres. Indium fluctuations at the nm and μm scale are measured using cathodoluminescence (CL) and Micro Photoluminescence (μPL) respectively. © 2010 IEEE.	en_US
dc.relation.ispartof	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD	en_US
dc.relation.isbasedon	10.1109/COMMAD.2010.5699700	en_US
dc.title	Luminescence of InGaN MQWs grown on misorientated GaN substrates	en_US
dc.type	Conference Proceeding
utslib.for	0906 Electrical and Electronic Engineering	en_US
dc.location.activity	Canberra, ACT	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US

Abstract:

Optoelectronic devices based on InGaN have already been commercialised, however, the Indium content is limited to around 5%. With higher Indium concentration the quantum efficiency decreases, which is thought to be due to increasing inhomogeneity. In this work it is shown that the growth of InGaN on misorientated GaN substrates forces these Indium fluctuations on a nanometre scale. Temperature dependent luminescence measurements provide information about the homogeneity of the band structure. Energy selective excitation confirms the existence of localisation centres and indicates their energetic depth. Time-resolved measurements define the lifetime of localized excitons, which provides information about radiative and nonradiative processes as well as tunnelling mechanisms between the localization centres. Indium fluctuations at the nm and μm scale are measured using cathodoluminescence (CL) and Micro Photoluminescence (μPL) respectively. © 2010 IEEE.

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