A Wideband Balanced Amplifier Using Edge-Coupled Quadrature Couplers in 0.13-μm SiGe HBT Technology

Chen, L; Chen, L; Zhu, H; Gomez-Garcia, R; Zhu, X

A Wideband Balanced Amplifier Using Edge-Coupled Quadrature Couplers in 0.13-μm SiGe HBT Technology

Chen, L Chen, L Zhu, H

Gomez-Garcia, R Zhu, X

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Publisher:: Institute of Electrical and Electronics Engineers (IEEE)
Publication Type:: Journal Article
Citation:: IEEE Transactions on Circuits and Systems I: Regular Papers, 2023, 70, (2), pp. 631-641
Issue Date:: 2023-02-01

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Field	Value	Language
dc.contributor.author	Chen, L
dc.contributor.author	Chen, L
dc.contributor.author	Zhu, H https://orcid.org/0000-0002-5157-8457
dc.contributor.author	Gomez-Garcia, R
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X
dc.date.accessioned	2023-03-19T23:53:17Z
dc.date.available	2023-03-19T23:53:17Z
dc.date.issued	2023-02-01
dc.identifier.citation	IEEE Transactions on Circuits and Systems I: Regular Papers, 2023, 70, (2), pp. 631-641
dc.identifier.issn	1549-8328
dc.identifier.issn	1558-0806
dc.identifier.uri	http://hdl.handle.net/10453/167634
dc.description.abstract	In this work, a wideband millimeter-wave (mm-wave) power amplifier (PA) is reported. To provide excellent input/output impedance matching across broadband, sufficient output power and high power-added efficiency (PAE), a balanced amplifier (BA)-based architecture is used in designing this PA. In particular, an edge-coupled quadrature coupler is designed as its RF-power-division/combination block, and its performance in terms of magnitude/phase balance error is minimized throughout a relatively wide bandwidth. A PA prototype is fabricated in 0.13- μ m SiGe HBT technology and tested. Under a 1.6-V power supply, the variation of small-signal gain is less than 3 dB within 20-40 GHz, which is equivalent to more than 66% fractional 3-dB bandwidth. Within this frequency range, at least 15.8 dBm saturated output power could be delivered with the peak PAE higher than 16.8%. The designed PA supports a single-carrier 200-MHz 64-quadrature amplitude modulation (QAM) with higher than 12.8-dBm average output power, while still maintaining an error vector magnitude (EVM) below -25 dB at 30 GHz. The size of the designed compact-size PA, including all pads, is only 0.7 mm × 1.3 mm.
dc.language	en
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.relation	http://purl.org/au-research/grants/arc/LP210100378
dc.relation.ispartof	IEEE Transactions on Circuits and Systems I: Regular Papers
dc.relation.isbasedon	10.1109/TCSI.2022.3220183
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0906 Electrical and Electronic Engineering
dc.subject.classification	Electrical & Electronic Engineering
dc.title	A Wideband Balanced Amplifier Using Edge-Coupled Quadrature Couplers in 0.13-μm SiGe HBT Technology
dc.type	Journal Article
utslib.citation.volume	70
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
dc.date.updated	2023-03-19T23:53:16Z
pubs.issue	2
pubs.publication-status	Published
pubs.volume	70
utslib.citation.issue	2

Abstract:

In this work, a wideband millimeter-wave (mm-wave) power amplifier (PA) is reported. To provide excellent input/output impedance matching across broadband, sufficient output power and high power-added efficiency (PAE), a balanced amplifier (BA)-based architecture is used in designing this PA. In particular, an edge-coupled quadrature coupler is designed as its RF-power-division/combination block, and its performance in terms of magnitude/phase balance error is minimized throughout a relatively wide bandwidth. A PA prototype is fabricated in 0.13- μ m SiGe HBT technology and tested. Under a 1.6-V power supply, the variation of small-signal gain is less than 3 dB within 20-40 GHz, which is equivalent to more than 66% fractional 3-dB bandwidth. Within this frequency range, at least 15.8 dBm saturated output power could be delivered with the peak PAE higher than 16.8%. The designed PA supports a single-carrier 200-MHz 64-quadrature amplitude modulation (QAM) with higher than 12.8-dBm average output power, while still maintaining an error vector magnitude (EVM) below -25 dB at 30 GHz. The size of the designed compact-size PA, including all pads, is only 0.7 mm × 1.3 mm.

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http://hdl.handle.net/10453/167634