DC-Bias Effects on Sputtered PZT pMUTs with High Transmit and Receive Sensitivities in Immersion for Imaging applications

Sarafianou, M; Wai Choong, DS; Jian Goh, D; Liu, J; Merugu, S; Zhang, QX; Chang, PHK; Giusti, D; Castoldi, L; D’Ercoli, F; Tacchini, R; Leotti, A; Sim, DH; Stuart Savoia, A; Lee, JE-Y

DC-Bias Effects on Sputtered PZT pMUTs with High Transmit and Receive Sensitivities in Immersion for Imaging applications

Sarafianou, M Wai Choong, DS Jian Goh, D Liu, J Merugu, S Zhang, QX Chang, PHK Giusti, D Castoldi, L D’Ercoli, F Tacchini, R Leotti, A Sim, DH Stuart Savoia, A Lee, JE-Y

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Publisher:: IEEE
Publication Type:: Conference Proceeding
Citation:: 2023 IEEE International Ultrasonics Symposium (IUS), 2023, 00, pp. 1-4
Issue Date:: 2023-11-07

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Field	Value	Language
dc.contributor.author	Sarafianou, M
dc.contributor.author	Wai Choong, DS
dc.contributor.author	Jian Goh, D
dc.contributor.author	Liu, J
dc.contributor.author	Merugu, S
dc.contributor.author	Zhang, QX
dc.contributor.author	Chang, PHK
dc.contributor.author	Giusti, D
dc.contributor.author	Castoldi, L
dc.contributor.author	D’Ercoli, F
dc.contributor.author	Tacchini, R
dc.contributor.author	Leotti, A
dc.contributor.author	Sim, DH
dc.contributor.author	Stuart Savoia, A
dc.contributor.author	Lee, JE-Y
dc.date	2023-09-03
dc.date.accessioned	2024-02-06T06:09:35Z
dc.date.available	2024-02-06T06:09:35Z
dc.date.issued	2023-11-07
dc.identifier.citation	2023 IEEE International Ultrasonics Symposium (IUS), 2023, 00, pp. 1-4
dc.identifier.isbn	9798350346459
dc.identifier.issn	1948-5719
dc.identifier.issn	1948-5727
dc.identifier.uri	http://hdl.handle.net/10453/175371
dc.description.abstract	This work reports a 7 5MHz sputtered Lead Zirconate Titanate PZT piezoelectric micromachined ultrasonic transducer pMUT array that demonstrates both strong transmit 9 3kPa V mm2 and receive performance 6 5V MPa characterized in immersion without signal amplification and within a 5mm2 aperture This paper presents yet higher RX sensitivities for the proposed device even with a direct connection to an oscilloscope We elucidate the effect of DC bias on the acoustic transmit TX and receive RX characteristics of PZT pMUTs and how these could be tuned to increase the performance of the pMUTs The device was fabricated at wafer scale in our 8 inch line which is capable of physical vapor deposition PVD of high quality PZT
dc.language	en
dc.publisher	IEEE
dc.relation.ispartof	2023 IEEE International Ultrasonics Symposium (IUS)
dc.relation.ispartof	2023 IEEE International Ultrasonics Symposium
dc.relation.isbasedon	10.1109/ius51837.2023.10307325
dc.rights	info:eu-repo/semantics/closedAccess
dc.title	DC-Bias Effects on Sputtered PZT pMUTs with High Transmit and Receive Sensitivities in Immersion for Imaging applications
dc.type	Conference Proceeding
utslib.citation.volume	00
utslib.location.activity	Montreal, QC, Canada
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
dc.date.updated	2024-02-06T06:09:24Z
pubs.finish-date	2023-09-08
pubs.publication-status	Published
pubs.start-date	2023-09-03
pubs.volume	00

Abstract:

This work reports a 7 5MHz sputtered Lead Zirconate Titanate PZT piezoelectric micromachined ultrasonic transducer pMUT array that demonstrates both strong transmit 9 3kPa V mm2 and receive performance 6 5V MPa characterized in immersion without signal amplification and within a 5mm2 aperture This paper presents yet higher RX sensitivities for the proposed device even with a direct connection to an oscilloscope We elucidate the effect of DC bias on the acoustic transmit TX and receive RX characteristics of PZT pMUTs and how these could be tuned to increase the performance of the pMUTs The device was fabricated at wafer scale in our 8 inch line which is capable of physical vapor deposition PVD of high quality PZT

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http://hdl.handle.net/10453/175371