Coupling spin defects in hexagonal boron nitride to a microwave cavity

Tran, TN; Gale, A; Whitefield, B; Dyakonov, V; Toth, M; Aharonovich, I; Kianinia, M

Coupling spin defects in hexagonal boron nitride to a microwave cavity

Tran, TN Gale, A Whitefield, B Dyakonov, V Toth, M

Aharonovich, I

Kianinia, M

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Publisher:: AIP Publishing
Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2023, 123, (3)
Issue Date:: 2023-07-17

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Field	Value	Language
dc.contributor.author	Tran, TN
dc.contributor.author	Gale, A
dc.contributor.author	Whitefield, B
dc.contributor.author	Dyakonov, V
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Kianinia, M https://orcid.org/0000-0003-4073-1492
dc.date.accessioned	2024-02-08T05:04:55Z
dc.date.available	2024-02-08T05:04:55Z
dc.date.issued	2023-07-17
dc.identifier.citation	Applied Physics Letters, 2023, 123, (3)
dc.identifier.issn	0003-6951
dc.identifier.issn	1077-3118
dc.identifier.uri	http://hdl.handle.net/10453/175489
dc.description.abstract	Optically addressable spin defects in hexagonal boron nitride (hBN) have become a promising platform for quantum sensing. While sensitivity of these defects is limited by their interactions with the spin environment in hBN, inefficient microwave delivery can further reduce their sensitivity. Here, we design and fabricate a microwave double arc resonator for efficient transferring of the microwave field at 3.8 GHz. The spin transitions in the ground state of V B − are coupled to the frequency of the microwave cavity, which result in enhanced optically detected magnetic resonance (ODMR) contrast. In addition, the linewidth of the ODMR signal further reduces, achieving a magnetic field sensitivity as low as 42.4 μT/√Hz. Our robust and scalable device engineering is promising for future employment of spin defects in hBN for quantum sensing.
dc.language	English
dc.publisher	AIP Publishing
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation	United States Department of the NavyN629092212028
dc.relation	http://purl.org/au-research/grants/arc/FT220100053
dc.relation.ispartof	Applied Physics Letters
dc.relation.isbasedon	10.1063/5.0156551
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	02 Physical Sciences, 09 Engineering, 10 Technology
dc.subject.classification	Applied Physics
dc.subject.classification	40 Engineering
dc.subject.classification	51 Physical sciences
dc.title	Coupling spin defects in hexagonal boron nitride to a microwave cavity
dc.type	Journal Article
utslib.citation.volume	123
utslib.for	02 Physical Sciences
utslib.for	09 Engineering
utslib.for	10 Technology
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Science
pubs.organisational-group	University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access	*
dc.date.updated	2024-02-08T05:04:54Z
pubs.issue	3
pubs.publication-status	Published
pubs.volume	123
utslib.citation.issue	3

Abstract:

Optically addressable spin defects in hexagonal boron nitride (hBN) have become a promising platform for quantum sensing. While sensitivity of these defects is limited by their interactions with the spin environment in hBN, inefficient microwave delivery can further reduce their sensitivity. Here, we design and fabricate a microwave double arc resonator for efficient transferring of the microwave field at 3.8 GHz. The spin transitions in the ground state of V B − are coupled to the frequency of the microwave cavity, which result in enhanced optically detected magnetic resonance (ODMR) contrast. In addition, the linewidth of the ODMR signal further reduces, achieving a magnetic field sensitivity as low as 42.4 μT/√Hz. Our robust and scalable device engineering is promising for future employment of spin defects in hBN for quantum sensing.

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http://hdl.handle.net/10453/175489