Design of a 75-85 GHz Driver Amplifier in 0.1-μm Gallium Arsenide pHEMT Technology
- Publisher:
- IEEE
- Publication Type:
- Conference Proceeding
- Citation:
- 2023 Asia-Pacific Microwave Conference (APMC), 2024, 00, pp. 423-425
- Issue Date:
- 2024-02-22
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1717085.pdf | Published version | 825.73 kB |
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This paper describes the design of a three stage driver amplifier operating between 75 and 85 GHz The amplifier is implemented using a 0 1 mu mathrm m Gallium Arsenide technology Based on the measured results the amplifier has a small signal gain of 18 8 dB at a nominal bias condition at the mid band In addition more than 18 2 dBm output power is achieved across the bandwidth The maximum output power of 20 9 dBm is obtained at 81 GHz The designed amplifier is very compact only 1 2 times 0 76 mathrm mm 2 in size including the pads and consumes 100 mA from a 4 V power supply
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