Broadband GaAs HBT Doherty Power Amplifier for 5G NR Mobile Handset

Bo, SF; Ou, J-H; Peng, YJ; Xuan, K; Xu, J-X; Zhang, XY

Broadband GaAs HBT Doherty Power Amplifier for 5G NR Mobile Handset

Bo, SF Ou, J-H Peng, YJ Xuan, K Xu, J-X Zhang, XY

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Publisher:: Institute of Electrical and Electronics Engineers (IEEE)
Publication Type:: Journal Article
Citation:: IEEE Transactions on Circuits & Systems II Express Briefs, 2024, 71, (2), pp. 527-531
Issue Date:: 2024

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Field	Value	Language
dc.contributor.author	Bo, SF
dc.contributor.author	Ou, J-H
dc.contributor.author	Peng, YJ
dc.contributor.author	Xuan, K
dc.contributor.author	Xu, J-X
dc.contributor.author	Zhang, XY
dc.date.accessioned	2024-08-21T05:24:34Z
dc.date.available	2024-08-21T05:24:34Z
dc.date.issued	2024
dc.identifier.citation	IEEE Transactions on Circuits & Systems II Express Briefs, 2024, 71, (2), pp. 527-531
dc.identifier.issn	1549-7747
dc.identifier.issn	1558-3791
dc.identifier.uri	http://hdl.handle.net/10453/180469
dc.description.abstract	This brief proposes a broadband flat-gain Doherty power amplifier (DPA) for 5G new radio (NR) mobile handsets. It is implemented by the heterogeneous integration of GaAs HBT process for PA die and 6-layer laminate for output network. To realize wideband Doherty-operation, an on-laminate transformer with three π -shaped networks is designed. Meanwhile, the parallel coupling of on-chip spiral inductors is introduced into input quadrature power splitter and interstage matching network to extend bandwidth and reduce size. Mechanism of the proposed DPA is analyzed and a prototype is implemented for verification. For continuous-wave (CW) signal, saturation power of 36-dBm and comparable peak power added efficiency (PAE) of the DPA at 3.3, 3.75 and 4.2 GHz are realized. Within the 6-dB power back-off (PBO) range, the measured PAE is higher than 27%. Flat gain within n77 band (3.3 – 4.2 GHz) is obtained, varying from 25.8 dB to 27.2 dB. Under the excitation of 5G NR 100-MHz QPSK signal, the proposed DPA delivers a PAE of 26.2% – 30.3% with the averaged output power of 30 dBm in n77 band. The corresponding lower and upper adjacent channel leakage ratios (ACLRs) are measured from −32.1 dBc to −36.5 dBc without digital pre-distortion (DPD). The size of die is 1.34×1.44 mm2, and the occupied core area of laminate is 1.69×3.85 mm2.
dc.language	English
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartof	IEEE Transactions on Circuits & Systems II Express Briefs
dc.relation.isbasedon	10.1109/tcsii.2023.3291528
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0906 Electrical and Electronic Engineering
dc.subject.classification	Electrical & Electronic Engineering
dc.subject.classification	4006 Communications engineering
dc.subject.classification	4009 Electronics, sensors and digital hardware
dc.title	Broadband GaAs HBT Doherty Power Amplifier for 5G NR Mobile Handset
dc.type	Journal Article
utslib.citation.volume	71
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2024-08-21T05:24:32Z
pubs.issue	2
pubs.publication-status	Published
pubs.volume	71
utslib.citation.issue	2

Abstract:

This brief proposes a broadband flat-gain Doherty power amplifier (DPA) for 5G new radio (NR) mobile handsets. It is implemented by the heterogeneous integration of GaAs HBT process for PA die and 6-layer laminate for output network. To realize wideband Doherty-operation, an on-laminate transformer with three π -shaped networks is designed. Meanwhile, the parallel coupling of on-chip spiral inductors is introduced into input quadrature power splitter and interstage matching network to extend bandwidth and reduce size. Mechanism of the proposed DPA is analyzed and a prototype is implemented for verification. For continuous-wave (CW) signal, saturation power of 36-dBm and comparable peak power added efficiency (PAE) of the DPA at 3.3, 3.75 and 4.2 GHz are realized. Within the 6-dB power back-off (PBO) range, the measured PAE is higher than 27%. Flat gain within n77 band (3.3 – 4.2 GHz) is obtained, varying from 25.8 dB to 27.2 dB. Under the excitation of 5G NR 100-MHz QPSK signal, the proposed DPA delivers a PAE of 26.2% – 30.3% with the averaged output power of 30 dBm in n77 band. The corresponding lower and upper adjacent channel leakage ratios (ACLRs) are measured from −32.1 dBc to −36.5 dBc without digital pre-distortion (DPD). The size of die is 1.34×1.44 mm2, and the occupied core area of laminate is 1.69×3.85 mm2.

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http://hdl.handle.net/10453/180469