Optimisation of electron irradiation for creating spin ensembles in hexagonal boron nitride

Healey, AJ; Singh, P; Robertson, IO; Gavin, C; Scholten, SC; Broadway, DA; Reineck, P; Abe, H; Ohshima, T; Kianinia, M; Aharonovich, I; Tetienne, JP

Optimisation of electron irradiation for creating spin ensembles in hexagonal boron nitride

Healey, AJ Singh, P Robertson, IO Gavin, C Scholten, SC Broadway, DA Reineck, P Abe, H Ohshima, T Kianinia, M

Aharonovich, I

Tetienne, JP

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Publisher:: IOP Publishing Ltd
Publication Type:: Journal Article
Citation:: Materials for Quantum Technology, 2024, 4, (3)
Issue Date:: 2024-09-01

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Field	Value	Language
dc.contributor.author	Healey, AJ
dc.contributor.author	Singh, P
dc.contributor.author	Robertson, IO
dc.contributor.author	Gavin, C
dc.contributor.author	Scholten, SC
dc.contributor.author	Broadway, DA
dc.contributor.author	Reineck, P
dc.contributor.author	Abe, H
dc.contributor.author	Ohshima, T
dc.contributor.author	Kianinia, M https://orcid.org/0000-0003-4073-1492
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Tetienne, JP
dc.date.accessioned	2025-01-03T03:38:19Z
dc.date.available	2025-01-03T03:38:19Z
dc.date.issued	2024-09-01
dc.identifier.citation	Materials for Quantum Technology, 2024, 4, (3)
dc.identifier.issn	2633-4356
dc.identifier.issn	2633-4356
dc.identifier.uri	http://hdl.handle.net/10453/182951
dc.description.abstract	Boron vacancy centre ( V B − ) ensembles in hexagonal boron nitride (hBN) have attracted recent interest for their potential as two-dimensional solid-state quantum sensors. Irradiation is necessary for V B − creation, however, to date only limited attention has been given to optimising the defect production process, especially in the case of bulk irradiation with high-energy particles, which offers scalability through the potential for creating ensembles in large volumes of material. Here we systematically investigate the effect of electron irradiation by varying the dose delivered to a range of hBN samples, which differ in their purity, and search for an optimum in measurement sensitivity. We find that moderate electron irradiation doses ( ≈ 5 × 10 18 cm−2) appear to offer the best sensitivity, and also observe a dependence on the initial crystal purity. These results pave the way for the scalable and cost-effective production of hBN quantum sensors, and provide insight into the mechanisms limiting V B − spin properties.
dc.language	English
dc.publisher	IOP Publishing Ltd
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation	United States Department of the NavyN629092212028
dc.relation.ispartof	Materials for Quantum Technology
dc.relation.isbasedon	10.1088/2633-4356/ad65ae
dc.rights	info:eu-repo/semantics/openAccess
dc.title	Optimisation of electron irradiation for creating spin ensembles in hexagonal boron nitride
dc.type	Journal Article
utslib.citation.volume	4
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Science
pubs.organisational-group	University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access	*
dc.rights.license	This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0). To view a copy of this license, visit https://creativecommons.org/licenses/by/4.0/
dc.date.updated	2025-01-03T03:38:16Z
pubs.issue	3
pubs.publication-status	Published
pubs.volume	4
utslib.citation.issue	3

Abstract:

Boron vacancy centre ( V B − ) ensembles in hexagonal boron nitride (hBN) have attracted recent interest for their potential as two-dimensional solid-state quantum sensors. Irradiation is necessary for V B − creation, however, to date only limited attention has been given to optimising the defect production process, especially in the case of bulk irradiation with high-energy particles, which offers scalability through the potential for creating ensembles in large volumes of material. Here we systematically investigate the effect of electron irradiation by varying the dose delivered to a range of hBN samples, which differ in their purity, and search for an optimum in measurement sensitivity. We find that moderate electron irradiation doses ( ≈ 5 × 10 18 cm−2) appear to offer the best sensitivity, and also observe a dependence on the initial crystal purity. These results pave the way for the scalable and cost-effective production of hBN quantum sensors, and provide insight into the mechanisms limiting V B − spin properties.

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http://hdl.handle.net/10453/182951