Nitrogen incorporation in ZnO nanowires using N<inf>2</inf>O dopant gas

Zhu, L; Ton-That, C; Phillips, MR

Nitrogen incorporation in ZnO nanowires using N<inf>2</inf>O dopant gas

Zhu, L Ton-That, C

Phillips, MR

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Publication Type:: Journal Article
Citation:: Materials Letters, 2013, 99 pp. 42 - 45
Issue Date:: 2013-03-25

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Field	Value	Language
dc.contributor.author	Zhu, L	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2013-03-25	en_US
dc.identifier.citation	Materials Letters, 2013, 99 pp. 42 - 45	en_US
dc.identifier.issn	0167-577X	en_US
dc.identifier.uri	http://hdl.handle.net/10453/27430
dc.description.abstract	Aligned nitrogen-doped ZnO nanowires were grown by chemical vapour deposition using Au catalyst. N incorporation was achieved through the introduction of N2O gas as a dopant source and confirmed by Raman spectroscopy, which reveals additional N-related modes at 275, 580 and 642 cm-1. The nanowires have a hexagonal faceted shape and are predominantly grown along the [001] direction. The nanowire morphology is unaffected by N incorporation. The luminescence peak at 3.24 eV was monitored as a function of N2O content. Intensity analysis of this band reveals that it can be partly attributed to donor-acceptor pair (DAP) emission originating from the N doping. © 2013 Elsevier B.V. All rights reserved.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP0986951
dc.relation.ispartof	Materials Letters	en_US
dc.relation.isbasedon	10.1016/j.matlet.2013.02.057	en_US
dc.subject.classification	Materials	en_US
dc.title	Nitrogen incorporation in ZnO nanowires using N<inf>2</inf>O dopant gas	en_US
dc.type	Journal Article
utslib.citation.volume	99	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US
pubs.volume	99	en_US

Abstract:

Aligned nitrogen-doped ZnO nanowires were grown by chemical vapour deposition using Au catalyst. N incorporation was achieved through the introduction of N2O gas as a dopant source and confirmed by Raman spectroscopy, which reveals additional N-related modes at 275, 580 and 642 cm-1. The nanowires have a hexagonal faceted shape and are predominantly grown along the [001] direction. The nanowire morphology is unaffected by N incorporation. The luminescence peak at 3.24 eV was monitored as a function of N2O content. Intensity analysis of this band reveals that it can be partly attributed to donor-acceptor pair (DAP) emission originating from the N doping. © 2013 Elsevier B.V. All rights reserved.

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http://hdl.handle.net/10453/27430