Structural characterization of B-doped diamond nanoindentation tips

Sprouster, DJ; Ruffell, S; Bradby, JE; Williams, JS; Lockrey, MN; Phillips, MR; Major, RC; Warren, OL

Structural characterization of B-doped diamond nanoindentation tips

Sprouster, DJ Ruffell, S Bradby, JE Williams, JS Lockrey, MN

Phillips, MR

Major, RC Warren, OL

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Publication Type:: Journal Article
Citation:: Journal of Materials Research, 2011, 26 (24), pp. 3051 - 3057
Issue Date:: 2011-01-01

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Field	Value	Language
dc.contributor.author	Sprouster, DJ	en_US
dc.contributor.author	Ruffell, S	en_US
dc.contributor.author	Bradby, JE	en_US
dc.contributor.author	Williams, JS	en_US
dc.contributor.author	Lockrey, MN https://orcid.org/0000-0002-0050-2858	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Major, RC	en_US
dc.contributor.author	Warren, OL	en_US
dc.date.issued	2011-01-01	en_US
dc.identifier.citation	Journal of Materials Research, 2011, 26 (24), pp. 3051 - 3057	en_US
dc.identifier.issn	0884-2914	en_US
dc.identifier.uri	http://hdl.handle.net/10453/29109
dc.description.abstract	Copyright © Materials Research Society 2011. We report on the electrical and structural properties of boron-doped diamond tips commonly used for in-situ electromechanical testing during nanoindentation. The boron dopant environment, as evidenced by cathodoluminescence (CL) microscopy, revealed significantly different boron states within each tip. Characteristic emission bands of both electrically activated and nonelectrically activated boron centers were identified in all boron-doped tips. Surface CL mapping also revealed vastly different surface properties, confirming a high amount of nonelectrically activated boron clusters at the tip surface. Raman microspectroscopy analysis showed that structural characteristics at the atomic scale for boron-doped tips also differ significantly when compared to an undoped diamond tip. Furthermore, the active boron concentration, as inferred via the Raman analysis, varied greatly from tip-to-tip. It was found that tips (or tip areas) with low overall boron concentration have a higher number of electrically inactive boron, and thus non-Ohmic contacts were made when these tips contacted metallic substrates. Conversely, tips that have higher boron concentrations and a higher number of electrically active boron centers display Ohmic-like contacts. Our results demonstrate the necessity to understand and fully characterize the boron environments, boron concentrations, and atomic structure of the tips prior to performing in situ electromechanical experiments, particularly if quantitative electrical data are required.	en_US
dc.relation.ispartof	Journal of Materials Research	en_US
dc.relation.isbasedon	10.1557/jmr.2011.377	en_US
dc.subject.classification	Materials	en_US
dc.title	Structural characterization of B-doped diamond nanoindentation tips	en_US
dc.type	Journal Article
utslib.citation.volume	24	en_US
utslib.citation.volume	26	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0913 Mechanical Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	24	en_US
pubs.publication-status	Published	en_US
pubs.volume	26	en_US

Abstract:

Copyright © Materials Research Society 2011. We report on the electrical and structural properties of boron-doped diamond tips commonly used for in-situ electromechanical testing during nanoindentation. The boron dopant environment, as evidenced by cathodoluminescence (CL) microscopy, revealed significantly different boron states within each tip. Characteristic emission bands of both electrically activated and nonelectrically activated boron centers were identified in all boron-doped tips. Surface CL mapping also revealed vastly different surface properties, confirming a high amount of nonelectrically activated boron clusters at the tip surface. Raman microspectroscopy analysis showed that structural characteristics at the atomic scale for boron-doped tips also differ significantly when compared to an undoped diamond tip. Furthermore, the active boron concentration, as inferred via the Raman analysis, varied greatly from tip-to-tip. It was found that tips (or tip areas) with low overall boron concentration have a higher number of electrically inactive boron, and thus non-Ohmic contacts were made when these tips contacted metallic substrates. Conversely, tips that have higher boron concentrations and a higher number of electrically active boron centers display Ohmic-like contacts. Our results demonstrate the necessity to understand and fully characterize the boron environments, boron concentrations, and atomic structure of the tips prior to performing in situ electromechanical experiments, particularly if quantitative electrical data are required.

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http://hdl.handle.net/10453/29109