Cathodoluminescence depth profiling of ion-implanted GaN

Kucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C; Li, G

Cathodoluminescence depth profiling of ion-implanted GaN

Kucheyev, SO Toth, M

Phillips, MR

Williams, JS Jagadish, C Li, G

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2001, 78 (1), pp. 34 - 36
Issue Date:: 2001-01-01

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Field	Value	Language
dc.contributor.author	Kucheyev, SO	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Williams, JS	en_US
dc.contributor.author	Jagadish, C	en_US
dc.contributor.author	Li, G	en_US
dc.date.issued	2001-01-01	en_US
dc.identifier.citation	Applied Physics Letters, 2001, 78 (1), pp. 34 - 36	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/3194
dc.description.abstract	Cathodoluminescence (CL) spectroscopy shows that even relatively low-dose keV light-ion bombardment (corresponding to the generation of ∼5 × 1019 vacancies/cm3) of wurtzite GaN results in a dramatic quenching of visible CL emission. Postimplantation annealing at temperatures up to 1050°C generally causes a partial recovery of measured CL intensities. However, CL depth profiles indicate that, in most cases, such a recovery results from CL emission from virgin GaN, beyond the implanted layer due to a reduction in the extent of light absorption within the implanted layer. In this case, CL emission from the implanted layer remains completely quenched even after such an annealing. These results show that an understanding of the effects of ion bombardment and postimplantation annealing on luminescence generation and light absorption is required for a correct interpretation of luminescence spectra of GaN optically doped by keV ion implantation. © 2001 American Institute of Physics.	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.1337646	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Cathodoluminescence depth profiling of ion-implanted GaN	en_US
dc.type	Journal Article
utslib.citation.volume	1	en_US
utslib.citation.volume	78	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
dc.location.activity	DANISH ENGN SOC, COPENHAGEN, DENMARK
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	closed_access
pubs.issue	1	en_US
pubs.publication-status	Published	en_US
pubs.volume	78	en_US

Abstract:

Cathodoluminescence (CL) spectroscopy shows that even relatively low-dose keV light-ion bombardment (corresponding to the generation of ∼5 × 1019 vacancies/cm3) of wurtzite GaN results in a dramatic quenching of visible CL emission. Postimplantation annealing at temperatures up to 1050°C generally causes a partial recovery of measured CL intensities. However, CL depth profiles indicate that, in most cases, such a recovery results from CL emission from virgin GaN, beyond the implanted layer due to a reduction in the extent of light absorption within the implanted layer. In this case, CL emission from the implanted layer remains completely quenched even after such an annealing. These results show that an understanding of the effects of ion bombardment and postimplantation annealing on luminescence generation and light absorption is required for a correct interpretation of luminescence spectra of GaN optically doped by keV ion implantation. © 2001 American Institute of Physics.

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http://hdl.handle.net/10453/3194