Cathodolfiminescence studies of self-organized cdTe/ZnTe quantum dot structure grown by MBE: In-plane and in-depth properties of the system

Godlewski, M; Mackowski, S; Karczewski, G; Goldys, EM; Phillips, MR

Cathodolfiminescence studies of self-organized cdTe/ZnTe quantum dot structure grown by MBE: In-plane and in-depth properties of the system

Godlewski, M Mackowski, S Karczewski, G Goldys, EM Phillips, MR

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Publication Type:: Journal Article
Citation:: Semiconductor Science and Technology, 2001, 16 (6), pp. 493 - 496
Issue Date:: 2001-06-01

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Field	Value	Language
dc.contributor.author	Godlewski, M	en_US
dc.contributor.author	Mackowski, S	en_US
dc.contributor.author	Karczewski, G	en_US
dc.contributor.author	Goldys, EM	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2001-06-01	en_US
dc.identifier.citation	Semiconductor Science and Technology, 2001, 16 (6), pp. 493 - 496	en_US
dc.identifier.issn	0268-1242	en_US
dc.identifier.uri	http://hdl.handle.net/10453/3201
dc.description.abstract	We report the results of low-temperature photoluminescence, room-temperature cathodoluminescence (CL) and scanning CL and electron microscopy of self-organized CdTe/ZnTe quantum dot (QD) structure. The in-depth profiling CL investigations were used to identify the microscopic origin of the CL emissions observed at 2.13,2.0-2.1 and 2.25 eV. In particular, we distinguish between CL emissions originating from the QD region of the structure and from the underlying buffer layers. Based on these measurements we assign the 2.13 eV CL band to the wetting layer and the 2.0-2.1 eV band to the QD emission. From the study of the in-plane and in-depth CL characteristics we demonstrate large in-plane fluctuations of the CL intensity and discuss their origin.	en_US
dc.relation.ispartof	Semiconductor Science and Technology	en_US
dc.relation.isbasedon	10.1088/0268-1242/16/6/314	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Cathodolfiminescence studies of self-organized cdTe/ZnTe quantum dot structure grown by MBE: In-plane and in-depth properties of the system	en_US
dc.type	Journal Article
utslib.citation.volume	6	en_US
utslib.citation.volume	16	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	6	en_US
pubs.publication-status	Published	en_US
pubs.volume	16	en_US

Abstract:

We report the results of low-temperature photoluminescence, room-temperature cathodoluminescence (CL) and scanning CL and electron microscopy of self-organized CdTe/ZnTe quantum dot (QD) structure. The in-depth profiling CL investigations were used to identify the microscopic origin of the CL emissions observed at 2.13,2.0-2.1 and 2.25 eV. In particular, we distinguish between CL emissions originating from the QD region of the structure and from the underlying buffer layers. Based on these measurements we assign the 2.13 eV CL band to the wetting layer and the 2.0-2.1 eV band to the QD emission. From the study of the in-plane and in-depth CL characteristics we demonstrate large in-plane fluctuations of the CL intensity and discuss their origin.

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http://hdl.handle.net/10453/3201