Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system
- Publication Type:
- Journal Article
- Citation:
- Journal of Semiconductors, 2011, 32 (1)
- Issue Date:
- 2011-01-01
Closed Access
Filename | Description | Size | |||
---|---|---|---|---|---|
2011003469OK.pdf | Published Version | 494.31 kB |
Copyright Clearance Process
- Recently Added
- In Progress
- Closed Access
This item is closed access and not available.
We demonstrate the ability of a combined scanning electron microscope and cathodoluminescence (CL) spectral mapping system to provide important spatially resolved information. The degree of inhomogeneity in spectral output across a multi-quantum well sample is measured using the SEM-CL system as well as measuring the efficiency roll-off with increasing carrier concentration. The effects of low energy electron beam modification on the InGaN/GaN multi quantum wells have also been characterized.
Please use this identifier to cite or link to this item: