Dynamics and microscopic origin of fast 1.5 μm emission in Er-doped SiO<inf>2</inf> sensitized with Si nanocrystals

Saeed, S; Timmerman, D; Gregorkiewicz, T

Dynamics and microscopic origin of fast 1.5 μm emission in Er-doped SiO<inf>2</inf> sensitized with Si nanocrystals

Saeed, S Timmerman, D Gregorkiewicz, T

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Publication Type:: Journal Article
Citation:: Physical Review B - Condensed Matter and Materials Physics, 2011, 83 (15)
Issue Date:: 2011-04-27

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Field	Value	Language
dc.contributor.author	Saeed, S	en_US
dc.contributor.author	Timmerman, D	en_US
dc.contributor.author	Gregorkiewicz, T	en_US
dc.date.issued	2011-04-27	en_US
dc.identifier.citation	Physical Review B - Condensed Matter and Materials Physics, 2011, 83 (15)	en_US
dc.identifier.issn	1098-0121	en_US
dc.identifier.uri	http://hdl.handle.net/10453/34507
dc.description.abstract	We investigate the origin of fast 1.5 μm photoluminescence from Er-doped SiO2 sensitized with silicon nanocrystals, which appears and decays within the first microsecond after a short laser excitation pulse. Time-resolved and temperature-dependent measurements on the 1.5 μm emission from Er-doped and Er-free samples reveal that the major part of this emission is Er related. A possible contribution from other photoluminescence bands, specifically of the defect-related band centered around 1.3 μm, has also been considered. All the results obtained indicate the dominant contribution of Er3+ ions to the fast 1.5 μm emission in the investigated materials. We propose two possible mechanisms behind the fast excitation and quenching of Er3+ 1.5 μm emission, which are both facilitated by Er-related trap centers with ionization energy of EA ∼60 meV. © 2011 American Physical Society.	en_US
dc.relation.ispartof	Physical Review B - Condensed Matter and Materials Physics	en_US
dc.relation.isbasedon	10.1103/PhysRevB.83.155323	en_US
dc.subject.classification	Fluids & Plasmas	en_US
dc.title	Dynamics and microscopic origin of fast 1.5 μm emission in Er-doped SiO<inf>2</inf> sensitized with Si nanocrystals	en_US
dc.type	Journal Article
utslib.citation.volume	15	en_US
utslib.citation.volume	83	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access
pubs.issue	15	en_US
pubs.publication-status	Published	en_US
pubs.volume	83	en_US

Abstract:

We investigate the origin of fast 1.5 μm photoluminescence from Er-doped SiO2 sensitized with silicon nanocrystals, which appears and decays within the first microsecond after a short laser excitation pulse. Time-resolved and temperature-dependent measurements on the 1.5 μm emission from Er-doped and Er-free samples reveal that the major part of this emission is Er related. A possible contribution from other photoluminescence bands, specifically of the defect-related band centered around 1.3 μm, has also been considered. All the results obtained indicate the dominant contribution of Er3+ ions to the fast 1.5 μm emission in the investigated materials. We propose two possible mechanisms behind the fast excitation and quenching of Er3+ 1.5 μm emission, which are both facilitated by Er-related trap centers with ionization energy of EA ∼60 meV. © 2011 American Physical Society.

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http://hdl.handle.net/10453/34507