Revisiting electrochromism in InN

Scott, K; Butcher, A; Wintrebert-Fouquet, M; Chen, PPT; Wuhrer, R; Phillips, MR

Revisiting electrochromism in InN

Scott, K Butcher, A Wintrebert-Fouquet, M Chen, PPT Wuhrer, R Phillips, MR

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Publication Type:: Journal Article
Citation:: Physica Status Solidi C: Conferences, 2005, 2 (7), pp. 2293 - 2296
Issue Date:: 2005-11-07

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Field	Value	Language
dc.contributor.author	Scott, K	en_US
dc.contributor.author	Butcher, A	en_US
dc.contributor.author	Wintrebert-Fouquet, M	en_US
dc.contributor.author	Chen, PPT	en_US
dc.contributor.author	Wuhrer, R	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2005-11-07	en_US
dc.identifier.citation	Physica Status Solidi C: Conferences, 2005, 2 (7), pp. 2293 - 2296	en_US
dc.identifier.issn	1610-1634	en_US
dc.identifier.uri	http://hdl.handle.net/10453/3582
dc.description.abstract	We confirm changes to the band-gap of InN thin films treated in an electrochemical cell in which water electrolysis is evident. Electrical properties of the films were also affected. It is suggested that the change in the film resistivity results from hydrogen incorporation or removal during the electrolysis (dependent on sample polarity). The presence of grain boundaries is believed to enhance the penetration of chemical species into the InN resulting in a greater net change in the observed properties. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.	en_US
dc.relation.ispartof	Physica Status Solidi C: Conferences	en_US
dc.relation.isbasedon	10.1002/pssc.200461560	en_US
dc.title	Revisiting electrochromism in InN	en_US
dc.type	Journal Article
utslib.citation.volume	7	en_US
utslib.citation.volume	2	en_US
utslib.for	0206 Quantum Physics	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
dc.location.activity	Pittsburgh, PA
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	7	en_US
pubs.publication-status	Published	en_US
pubs.volume	2	en_US

Abstract:

We confirm changes to the band-gap of InN thin films treated in an electrochemical cell in which water electrolysis is evident. Electrical properties of the films were also affected. It is suggested that the change in the film resistivity results from hydrogen incorporation or removal during the electrolysis (dependent on sample polarity). The presence of grain boundaries is believed to enhance the penetration of chemical species into the InN resulting in a greater net change in the observed properties. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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http://hdl.handle.net/10453/3582