Cryogenic electron beam induced chemical etching

Martin, AA; Toth, M

Cryogenic electron beam induced chemical etching

Martin, AA

Toth, M

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Publication Type:: Journal Article
Citation:: ACS Applied Materials and Interfaces, 2014, 6 (21), pp. 18457 - 18460
Issue Date:: 2014-01-01

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Field	Value	Language
dc.contributor.author	Martin, AA https://orcid.org/0000-0003-2362-5524	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.date.issued	2014-01-01	en_US
dc.identifier.citation	ACS Applied Materials and Interfaces, 2014, 6 (21), pp. 18457 - 18460	en_US
dc.identifier.issn	1944-8244	en_US
dc.identifier.uri	http://hdl.handle.net/10453/35823
dc.description.abstract	© 2014 American Chemical Society. Cryogenic cooling is used to enable efficient, gas-mediated electron beam induced etching (EBIE) in cases where the etch rate is negligible at room and elevated substrate temperatures. The process is demonstrated using nitrogen trifluoride (NF3) as the etch precursor, and Si, SiO2, SiC, and Si3N4 as the materials volatilized by an electron beam. Cryogenic cooling broadens the range of precursors that can be used for EBIE, and enables high-resolution, deterministic etching of materials that are volatilized spontaneously by conventional etch precursors as demonstrated here by NF3 and XeF2 EBIE of silicon.	en_US
dc.relation.ispartof	ACS Applied Materials and Interfaces	en_US
dc.relation.isbasedon	10.1021/am506163w	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Cryogenic electron beam induced chemical etching	en_US
dc.type	Journal Article
utslib.citation.volume	21	en_US
utslib.citation.volume	6	en_US
utslib.for	0303 Macromolecular and Materials Chemistry	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	open_access
pubs.issue	21	en_US
pubs.publication-status	Published	en_US
pubs.volume	6	en_US

Abstract:

© 2014 American Chemical Society. Cryogenic cooling is used to enable efficient, gas-mediated electron beam induced etching (EBIE) in cases where the etch rate is negligible at room and elevated substrate temperatures. The process is demonstrated using nitrogen trifluoride (NF3) as the etch precursor, and Si, SiO2, SiC, and Si3N4 as the materials volatilized by an electron beam. Cryogenic cooling broadens the range of precursors that can be used for EBIE, and enables high-resolution, deterministic etching of materials that are volatilized spontaneously by conventional etch precursors as demonstrated here by NF3 and XeF2 EBIE of silicon.

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http://hdl.handle.net/10453/35823