Room temperature quantum emission from cubic silicon carbide nanoparticles

Castelletto, S; Johnson, BC; Zachreson, C; Beke, D; Balogh, I; Ohshima, T; Aharonovich, I; Gali, A

Room temperature quantum emission from cubic silicon carbide nanoparticles

Castelletto, S Johnson, BC Zachreson, C

Beke, D Balogh, I Ohshima, T Aharonovich, I

Gali, A

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Publication Type:: Journal Article
Citation:: ACS Nano, 2014, 8 (8), pp. 7938 - 7947
Issue Date:: 2014-01-01

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Field	Value	Language
dc.contributor.author	Castelletto, S	en_US
dc.contributor.author	Johnson, BC	en_US
dc.contributor.author	Zachreson, C https://orcid.org/0000-0002-0578-4049	en_US
dc.contributor.author	Beke, D	en_US
dc.contributor.author	Balogh, I	en_US
dc.contributor.author	Ohshima, T	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Gali, A	en_US
dc.date.issued	2014-01-01	en_US
dc.identifier.citation	ACS Nano, 2014, 8 (8), pp. 7938 - 7947	en_US
dc.identifier.issn	1936-0851	en_US
dc.identifier.uri	http://hdl.handle.net/10453/35852
dc.description.abstract	The photoluminescence (PL) arising from silicon carbide nanoparticles has so far been associated with the quantum confinement effect or to radiative transitions between electronically active surface states. In this work we show that cubic phase silicon carbide nanoparticles with diameters in the range 45-500 nm can host other point defects responsible for photoinduced intrabandgap PL. We demonstrate that these nanoparticles exhibit single photon emission at room temperature with record saturation count rates of 7 × 106 counts/s. The realization of nonclassical emission from SiC nanoparticles extends their potential use from fluorescence biomarker beads to optically active quantum elements for next generation quantum sensing and nanophotonics. The single photon emission is related to single isolated SiC defects that give rise to states within the bandgap. © 2014 American Chemical Society.	en_US
dc.relation.ispartof	ACS Nano	en_US
dc.relation.isbasedon	10.1021/nn502719y	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Room temperature quantum emission from cubic silicon carbide nanoparticles	en_US
dc.type	Journal Article
utslib.citation.volume	8	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0205 Optical Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	8	en_US
pubs.publication-status	Published	en_US
pubs.volume	8	en_US

Abstract:

The photoluminescence (PL) arising from silicon carbide nanoparticles has so far been associated with the quantum confinement effect or to radiative transitions between electronically active surface states. In this work we show that cubic phase silicon carbide nanoparticles with diameters in the range 45-500 nm can host other point defects responsible for photoinduced intrabandgap PL. We demonstrate that these nanoparticles exhibit single photon emission at room temperature with record saturation count rates of 7 × 106 counts/s. The realization of nonclassical emission from SiC nanoparticles extends their potential use from fluorescence biomarker beads to optically active quantum elements for next generation quantum sensing and nanophotonics. The single photon emission is related to single isolated SiC defects that give rise to states within the bandgap. © 2014 American Chemical Society.

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http://hdl.handle.net/10453/35852