Atomic layer deposition of thin films of ZnSe - Structural and optical characterization

Guziewicz, E; Godlewski, M; Kopalko, K; Łusakowska, E; Dynowska, E; Guziewicz, M; Godlewski, MM; Phillips, M

Atomic layer deposition of thin films of ZnSe - Structural and optical characterization

Guziewicz, E Godlewski, M Kopalko, K Łusakowska, E Dynowska, E Guziewicz, M Godlewski, MM Phillips, M

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Publication Type:: Journal Article
Citation:: Thin Solid Films, 2004, 446 (2), pp. 172 - 177
Issue Date:: 2004-01-15

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Field	Value	Language
dc.contributor.author	Guziewicz, E	en_US
dc.contributor.author	Godlewski, M	en_US
dc.contributor.author	Kopalko, K	en_US
dc.contributor.author	Łusakowska, E	en_US
dc.contributor.author	Dynowska, E	en_US
dc.contributor.author	Guziewicz, M	en_US
dc.contributor.author	Godlewski, MM	en_US
dc.contributor.author	Phillips, M https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2004-01-15	en_US
dc.identifier.citation	Thin Solid Films, 2004, 446 (2), pp. 172 - 177	en_US
dc.identifier.issn	0040-6090	en_US
dc.identifier.uri	http://hdl.handle.net/10453/362
dc.description.abstract	Thin films of sphalerite-type ZnSe were grown by atomic layer deposition (ALD) from elemental Zn and Se precursors. These films, grown on various substrates, show bright blue 'edge' emission accompanied by donor-acceptor pair emissions in the blue, green and red spectral regions. Red, green and blue emissions mixed together give a white color, with a color temperature between 2400 and 4500 K depending on a layer thickness and temperature. ZnSe grown by ALD is in consequence a promising material for the fabrication of semiconductor-based white light emitting thin film electroluminescence displays. © 2003 Elsevier B.V. All rights reserved.	en_US
dc.relation.ispartof	Thin Solid Films	en_US
dc.relation.isbasedon	10.1016/j.tsf.2003.09.041	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Atomic layer deposition of thin films of ZnSe - Structural and optical characterization	en_US
dc.type	Journal Article
utslib.citation.volume	2	en_US
utslib.citation.volume	446	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	2	en_US
pubs.publication-status	Published	en_US
pubs.volume	446	en_US

Abstract:

Thin films of sphalerite-type ZnSe were grown by atomic layer deposition (ALD) from elemental Zn and Se precursors. These films, grown on various substrates, show bright blue 'edge' emission accompanied by donor-acceptor pair emissions in the blue, green and red spectral regions. Red, green and blue emissions mixed together give a white color, with a color temperature between 2400 and 4500 K depending on a layer thickness and temperature. ZnSe grown by ALD is in consequence a promising material for the fabrication of semiconductor-based white light emitting thin film electroluminescence displays. © 2003 Elsevier B.V. All rights reserved.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/362