Identification of bound exciton complexes in ZnO

Strassburg, M; Rodina, A; Dworzak, M; Haboeck, U; Krestnikov, IL; Hoffmann, A; Gelhausen, O; Phillips, MR; Alves, HR; Zeuner, A; Hofmann, DM; Meyer, BK

Identification of bound exciton complexes in ZnO

Strassburg, M Rodina, A Dworzak, M Haboeck, U Krestnikov, IL Hoffmann, A Gelhausen, O Phillips, MR

Alves, HR Zeuner, A Hofmann, DM Meyer, BK

Permalink

Publication Type:: Journal Article
Citation:: Physica Status Solidi (B) Basic Research, 2004, 241 (3), pp. 607 - 611
Issue Date:: 2004-03-01

Closed Access

	Filename	Description	Size
	2004000043.pdf		263.02 kB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Strassburg, M	en_US
dc.contributor.author	Rodina, A	en_US
dc.contributor.author	Dworzak, M	en_US
dc.contributor.author	Haboeck, U	en_US
dc.contributor.author	Krestnikov, IL	en_US
dc.contributor.author	Hoffmann, A	en_US
dc.contributor.author	Gelhausen, O	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Alves, HR	en_US
dc.contributor.author	Zeuner, A	en_US
dc.contributor.author	Hofmann, DM	en_US
dc.contributor.author	Meyer, BK	en_US
dc.date.issued	2004-03-01	en_US
dc.identifier.citation	Physica Status Solidi (B) Basic Research, 2004, 241 (3), pp. 607 - 611	en_US
dc.identifier.issn	0370-1972	en_US
dc.identifier.uri	http://hdl.handle.net/10453/399
dc.description.abstract	An identification of shallow bound exciton centers in ZnO is presented based on magneto-optical measurements and diffusion experiments. The thermalization behavior of the Zeeman split components confirms that the I 4, I6, I8 and I9 exciton lines stem from donor bound exciton complexes. The results are supported by theoretical analysis of shallow bound exciton complexes revealing the Γ7 symmetry of the upper valence band. The presence of two-electron satellites related to the respective transitions is further evidence for the donor bound complexes and enabled the determination of donor binding energies. Hydrogen, aluminum, gallium and indium were identified to origin the I4, I 6, I8 and I9 lines by doping, diffusion and annealing experiments combined with photoluminescence and secondary ion mass spectrometry. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.	en_US
dc.relation.ispartof	Physica Status Solidi (B) Basic Research	en_US
dc.relation.isbasedon	10.1002/pssb.200304187	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Identification of bound exciton complexes in ZnO	en_US
dc.type	Journal Article
utslib.citation.volume	3	en_US
utslib.citation.volume	241	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0206 Quantum Physics	en_US
utslib.for	1007 Nanotechnology	en_US
dc.location.activity	NIAGARA FALLS, NEW YORK
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	3	en_US
pubs.publication-status	Published	en_US
pubs.volume	241	en_US

Abstract:

An identification of shallow bound exciton centers in ZnO is presented based on magneto-optical measurements and diffusion experiments. The thermalization behavior of the Zeeman split components confirms that the I 4, I6, I8 and I9 exciton lines stem from donor bound exciton complexes. The results are supported by theoretical analysis of shallow bound exciton complexes revealing the Γ7 symmetry of the upper valence band. The presence of two-electron satellites related to the respective transitions is further evidence for the donor bound complexes and enabled the determination of donor binding energies. Hydrogen, aluminum, gallium and indium were identified to origin the I4, I 6, I8 and I9 lines by doping, diffusion and annealing experiments combined with photoluminescence and secondary ion mass spectrometry. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/399