Direct-write electron beam fabrication of optically active diamond nanostructures

Toth, M; Martin, AA; Shanley, TW; Aharonovich, I

Direct-write electron beam fabrication of optically active diamond nanostructures

Toth, M

Martin, AA Shanley, TW Aharonovich, I

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Publication Type:: Conference Proceeding
Citation:: 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 6 - 10
Issue Date:: 2014-02-10

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Field	Value	Language
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Martin, AA	en_US
dc.contributor.author	Shanley, TW	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.date.issued	2014-02-10	en_US
dc.identifier.citation	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 6 - 10	en_US
dc.identifier.isbn	9781479968671	en_US
dc.identifier.uri	http://hdl.handle.net/10453/41204
dc.description.abstract	© 2014 IEEE. Controlled fabrication of semiconductor nanostructures is a prerequisite step in the engineering of next generation photonic and optoelectronic devices. Here we describe two advances in electron beam processing of single crystal diamond: (i) chemical dry etching of optically active nanostructures, and (ii) chemical switching of the charge state of nitrogen-vacancy centers by surface fluorination. Etching and fluorination are realized by irradiating diamond by kiloelectronvolt electrons at room temperature in the presence of H2O and NF3 vapor, respectively. The techniques do not generate defects that quench luminescence, thereby enabling the fabrication and editing of optically active nanostructures and diamond-based devices.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DE130100592
dc.relation.ispartof	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014	en_US
dc.relation.isbasedon	10.1109/COMMAD.2014.7038637	en_US
dc.title	Direct-write electron beam fabrication of optically active diamond nanostructures	en_US
dc.type	Conference Proceeding
utslib.for	1007 Nanotechnology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US

Abstract:

© 2014 IEEE. Controlled fabrication of semiconductor nanostructures is a prerequisite step in the engineering of next generation photonic and optoelectronic devices. Here we describe two advances in electron beam processing of single crystal diamond: (i) chemical dry etching of optically active nanostructures, and (ii) chemical switching of the charge state of nitrogen-vacancy centers by surface fluorination. Etching and fluorination are realized by irradiating diamond by kiloelectronvolt electrons at room temperature in the presence of H2O and NF3 vapor, respectively. The techniques do not generate defects that quench luminescence, thereby enabling the fabrication and editing of optically active nanostructures and diamond-based devices.

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http://hdl.handle.net/10453/41204