Controlling the properties of InGaAs quantum dots by selective-area epitaxy

Mokkapati, S; Lever, P; Tan, HH; Jagadish, C; McBean, KE; Phillips, MR

Controlling the properties of InGaAs quantum dots by selective-area epitaxy

Mokkapati, S Lever, P Tan, HH Jagadish, C McBean, KE

Phillips, MR

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2005, 86 (11), pp. 1 - 3
Issue Date:: 2005-03-14

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Field	Value	Language
dc.contributor.author	Mokkapati, S	en_US
dc.contributor.author	Lever, P	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.contributor.author	McBean, KE https://orcid.org/0000-0001-7496-8151	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2005-03-14	en_US
dc.identifier.citation	Applied Physics Letters, 2005, 86 (11), pp. 1 - 3	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/413
dc.description.abstract	Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of the selectively grown dots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAs quantum well and InGaAs quantum dots on the same wafer is demonstrated. By using a single-step growth, dots luminescing at different wavelengths, in the range 1150-1230 nm, in different parts of the same wafer are achieved. © 2005 American Institute of Physics.	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.1875745	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Controlling the properties of InGaAs quantum dots by selective-area epitaxy	en_US
dc.type	Journal Article
utslib.citation.volume	11	en_US
utslib.citation.volume	86	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	11	en_US
pubs.publication-status	Published	en_US
pubs.volume	86	en_US

Abstract:

Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of the selectively grown dots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAs quantum well and InGaAs quantum dots on the same wafer is demonstrated. By using a single-step growth, dots luminescing at different wavelengths, in the range 1150-1230 nm, in different parts of the same wafer are achieved. © 2005 American Institute of Physics.

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http://hdl.handle.net/10453/413