Electron beam induced etching of carbon

Martin, AA; McCredie, G; Toth, M

Electron beam induced etching of carbon

Martin, AA

McCredie, G Toth, M

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2015, 107 (4)
Issue Date:: 2015-07-27

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Field	Value	Language
dc.contributor.author	Martin, AA https://orcid.org/0000-0003-2362-5524	en_US
dc.contributor.author	McCredie, G	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.date.issued	2015-07-27	en_US
dc.identifier.citation	Applied Physics Letters, 2015, 107 (4)	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/42014
dc.description.abstract	© 2015 AIP Publishing LLC. Nanopatterning of graphene and diamond by low energy (≤ 30keV) electrons has previously been attributed to mechanisms that include atomic displacements caused by knock-on, electron beam heating, sputtering by ionized gas molecules, and chemical etching driven by a number of gases that include N2. Here, we show that a number of these mechanisms are insignificant, and the nanopatterning process can instead be explained by etching caused by electron induced dissociation of residual H2O molecules. Our results have significant practical implications for gas-mediated electron beam nanopatterning techniques and help elucidate the underlying mechanisms.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP140102721
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.4927593	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Electron beam induced etching of carbon	en_US
dc.type	Journal Article
utslib.citation.volume	4	en_US
utslib.citation.volume	107	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	open_access
pubs.issue	4	en_US
pubs.publication-status	Published	en_US
pubs.volume	107	en_US

Abstract:

© 2015 AIP Publishing LLC. Nanopatterning of graphene and diamond by low energy (≤ 30keV) electrons has previously been attributed to mechanisms that include atomic displacements caused by knock-on, electron beam heating, sputtering by ionized gas molecules, and chemical etching driven by a number of gases that include N2. Here, we show that a number of these mechanisms are insignificant, and the nanopatterning process can instead be explained by etching caused by electron induced dissociation of residual H2O molecules. Our results have significant practical implications for gas-mediated electron beam nanopatterning techniques and help elucidate the underlying mechanisms.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/42014