Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layer

Godlewski, M; Goldys, EM; Phillips, MR; Pakula, K; Baranowski, JM

Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layer

Godlewski, M Goldys, EM Phillips, MR

Pakula, K Baranowski, JM

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Publication Type:: Journal Article
Citation:: Applied Surface Science, 2001, 177 (1-2), pp. 22 - 31
Issue Date:: 2001-06-01

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Field	Value	Language
dc.contributor.author	Godlewski, M	en_US
dc.contributor.author	Goldys, EM	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Pakula, K	en_US
dc.contributor.author	Baranowski, JM	en_US
dc.date.issued	2001-06-01	en_US
dc.identifier.citation	Applied Surface Science, 2001, 177 (1-2), pp. 22 - 31	en_US
dc.identifier.issn	0169-4332	en_US
dc.identifier.uri	http://hdl.handle.net/10453/4260
dc.description.abstract	We report the results of room-temperature cathodoluminescence (CL) and of scanning CL and electron (SEM) microscopy of GaN/InGaN structure with a single InGaN quantum well on top. The structures were grown by MOCVD on sapphire with low-temperature (LT) GaN buffer. Depth-profiling CL investigations were used to identify the observed CL emissions, which show a complicated in-depth evolution. The influence of a LT GaN buffer on structural and optical properties of GaN/sapphire interface in the structure is discussed. Our results show that inter-diffusion of Al from sapphire to the GaN buffer layer takes place. A gradual improvement of film quality with increasing distance from interface is demonstrated. © 2001 Elsevier Science B.V.	en_US
dc.relation.ispartof	Applied Surface Science	en_US
dc.relation.isbasedon	10.1016/S0169-4332(01)00188-X	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layer	en_US
dc.type	Journal Article
utslib.citation.volume	1-2	en_US
utslib.citation.volume	177	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	1-2	en_US
pubs.publication-status	Published	en_US
pubs.volume	177	en_US

Abstract:

We report the results of room-temperature cathodoluminescence (CL) and of scanning CL and electron (SEM) microscopy of GaN/InGaN structure with a single InGaN quantum well on top. The structures were grown by MOCVD on sapphire with low-temperature (LT) GaN buffer. Depth-profiling CL investigations were used to identify the observed CL emissions, which show a complicated in-depth evolution. The influence of a LT GaN buffer on structural and optical properties of GaN/sapphire interface in the structure is discussed. Our results show that inter-diffusion of Al from sapphire to the GaN buffer layer takes place. A gradual improvement of film quality with increasing distance from interface is demonstrated. © 2001 Elsevier Science B.V.

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