Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers

Godlewski, M; Łusakowska, E; Bozek, R; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D

Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers

Godlewski, M Łusakowska, E Bozek, R Goldys, EM Phillips, MR

Böttcher, T Figge, S Hommel, D

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Publication Type:: Journal Article
Citation:: Physica Status Solidi (A) Applied Research, 2004, 201 (2), pp. 212 - 215
Issue Date:: 2004-01-01

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Field	Value	Language
dc.contributor.author	Godlewski, M	en_US
dc.contributor.author	Łusakowska, E	en_US
dc.contributor.author	Bozek, R	en_US
dc.contributor.author	Goldys, EM	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Böttcher, T	en_US
dc.contributor.author	Figge, S	en_US
dc.contributor.author	Hommel, D	en_US
dc.date.issued	2004-01-01	en_US
dc.identifier.citation	Physica Status Solidi (A) Applied Research, 2004, 201 (2), pp. 212 - 215	en_US
dc.identifier.issn	0031-8965	en_US
dc.identifier.uri	http://hdl.handle.net/10453/4302
dc.description.abstract	We evaluate influence of n-type doping and of the doping level on structural and optical quality of GaN epilayers. We confirm reported previously strong enhancement of light emission from Si doped samples and discuss possible mechanisms of this enhancement. Kelvin probe measurements indicate smoothing of potential fluctuations in the doped layers. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.	en_US
dc.relation.ispartof	Physica Status Solidi (A) Applied Research	en_US
dc.relation.isbasedon	10.1002/pssa.200303903	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers	en_US
dc.type	Journal Article
utslib.citation.volume	2	en_US
utslib.citation.volume	201	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	1007 Nanotechnology	en_US
dc.location.activity	Brisbane, Australia
dc.location.activity	WARSAW, POLAND
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	2	en_US
pubs.publication-status	Published	en_US
pubs.volume	201	en_US

Abstract:

We evaluate influence of n-type doping and of the doping level on structural and optical quality of GaN epilayers. We confirm reported previously strong enhancement of light emission from Si doped samples and discuss possible mechanisms of this enhancement. Kelvin probe measurements indicate smoothing of potential fluctuations in the doped layers. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/4302