Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescence

Pauc, N; Phillips, MR; Aimez, V; Drouin, D

Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescence

Pauc, N Phillips, MR

Aimez, V Drouin, D

Permalink

Publication Type:: Journal Article
Citation:: Superlattices and Microstructures, 2006, 40 (4-6 SPEC. ISS.), pp. 557 - 561
Issue Date:: 2006-10-01

Closed Access

	Filename	Description	Size
	2006005014.pdf		1.11 MB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Pauc, N	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Aimez, V	en_US
dc.contributor.author	Drouin, D	en_US
dc.date.issued	2006-10-01	en_US
dc.identifier.citation	Superlattices and Microstructures, 2006, 40 (4-6 SPEC. ISS.), pp. 557 - 561	en_US
dc.identifier.issn	0749-6036	en_US
dc.identifier.uri	http://hdl.handle.net/10453/463
dc.description.abstract	We present a low temperature study of GaN epilayers by means of low voltage cathodoluminescence (CL). We show that lowering the primary electrons accelerating voltage down to 1 kV allows imaging of single threading dislocations. By using monochromatic or panchromatic low voltage CL microscopy, it is possible to extract different diffusion lengths related to free excitons, bound excitons or donor-to-acceptor pair transitions. © 2006 Elsevier Ltd. All rights reserved.	en_US
dc.relation.ispartof	Superlattices and Microstructures	en_US
dc.relation.isbasedon	10.1016/j.spmi.2006.07.024	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescence	en_US
dc.type	Journal Article
utslib.citation.volume	4-6 SPEC. ISS.	en_US
utslib.citation.volume	40	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0206 Quantum Physics	en_US
dc.location.activity	Nice, FRANCE
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	4-6 SPEC. ISS.	en_US
pubs.publication-status	Published	en_US
pubs.volume	40	en_US

Abstract:

We present a low temperature study of GaN epilayers by means of low voltage cathodoluminescence (CL). We show that lowering the primary electrons accelerating voltage down to 1 kV allows imaging of single threading dislocations. By using monochromatic or panchromatic low voltage CL microscopy, it is possible to extract different diffusion lengths related to free excitons, bound excitons or donor-to-acceptor pair transitions. © 2006 Elsevier Ltd. All rights reserved.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/463