Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission
- Publication Type:
- Journal Article
- Citation:
- Acta Physica Polonica A, 2003, 103 (6), pp. 689 - 694
- Issue Date:
- 2003-01-01
Open Access
Copyright Clearance Process
- Recently Added
- In Progress
- Open Access
This item is open access.
Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.
Please use this identifier to cite or link to this item: